when the p type semi conductor is connected to n type the electrons in n type migrates towards p type to fill the vacancy i.e holes in p type. As a result accepter ions are developed in n type and donor ions in p type which restrict further movement of electrons and holes . this layer of donor and accepter ions at the pn-junction is called depletion region. and across this region a potential is developed which is called barrier potential.
It is the space-charge region on either side of the junction together is khown as depletion region.
the area around the junction when not forward biased
diode is unipolar
n-p-n and p-n-p junction diodes
I don't think that the pn junction diode can emit light. Maybe it does, but a 'plastic' that covering the diode makes the light cannot be seen. Besides, you won't see it glow as it connect to the power source, right?
what is the difference between reverse characteristics of zener diode and a practical diode ?
barrier voltage decreases by 2mV for every 1 degree increase in temperature.
When the pn junction is forward biased, some of the space charge is neutralized reducing the width of the pn junction.
depletion region is formed only after recombination of holes and electrons..so in depletion region there are only and only immoble positive and nagative ions...hence,there is no charge carrier..
The presence of mobile and bound charges on either sides of the pn junction causes the depletion layer. A pn junction is formed when a semiconductor is dopped with a pentavalent impurity on one side and a tri-valent impurity on the other side.on one side electrons will be more in number and on the other side holes will be more in number.At the junction the electrons combine with holes and there will be no charge carriers(i.e. electrons and holes) in that region.That region which is free from charge carriers is called depletion region.
depletion region acts as dielectric between conducting p-plate and n-plate. Note: junction must be in non-conducting state.
When a pn junction is direct polarized, the height of the depletion layer is reduced and majority charge carriers now have sufficient energy to cross the junction and when it is revers polarized the height of the depletion layer is increased and the number of majority charge with sufficient energy to cross the junction is cut sharply.
because charge carriers are depleted there, some electrons from n side have fallen into holes on p side reducing/depleting carriers on both sides.
depletion region will decrease.
What is the cause of reverse recovery time in a pn junction diode
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
any capacitance is given by equation C = (epsilon * A/ d) where d is distance between two plates, thus as d reduces C increases. Now, in depletion region as we increase reverse bias, the depletion region width increases. Now consider depletion region as a parallel plate capacitor, with positive charges on n side and negative charges on p side. Thus, as reverse bias increases, d of junction capacitance increases thus capacitance reduces. On other hand, as reverse bias reduces, d of junction capacitance reduces, thus capacitance increases. -Amey Churi
because that the tunnel diode is a standard pn junction diode in many respect except its highly doped pn junction so it has some characteristics in the negative resistance region another that its a standard diode
they ARE, but only in close proximity (at the junction). this is what creates the depletion region around the junction: electrons being attracted to holes and falling in. once the depletion region gets wide enough attraction stops.