As we bring P type and N type semiconductors fused together, then rich holes in P type would get neutralized with some rich electrons in N type. Hence at the juntion region, there will not be charge carriers ie holes and electrons. So it is known as Depletion Region. Depletion means emptying something. In case of ordinary diode this depletion region would be wider where as in case of Zener Diode the depletion region would be narrower. This is because the semiconductors are heavily doped. Hence potential barrier would be easily built up even with a thin region where holes and electrons get combined for neutrelization.
The space around the junction of a diode that is not forward biased that is depleted of charge carriers due either to spontaneous electron-hole recombination or the withdrawal of charge carriers by attraction when reverse biased. Without available charge carriers at the junction the diode is not able to conduct an electrical current.
When the diode is biased such that the depletion region vanishes the diode is then forward biased and can conduct an electrical current. The fact that it takes a certain voltage across the diode to eliminate the depletion region is what causes the nonzero knee voltage in diodes.
A region in a semiconductor device, usually at the junction of p-type and n type material in which there is neither an axcess of electron nor holes. Large depletion region inhibit current flow. See also semiconductor.
0.1 micron
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
i think in order to population inversion in depletion region. also the laser diodes must be degenerated.
When a diode passes from forward biased to reverse biased it takes a short period of time for the charge carriers in the vicinity of the junction to recombine and create a nonconducting depletion region. During this time period the diode conducts in the reverse direction, this is called the reverse recovery time. Its different for every kind of diode, to get the value for a specific diode consult the datasheet.
zener cut in voltage
0.1 micron
depletion region
depletion layer depletion zone juntion region space charge region bipolar transistor field effect transistor variable capacitance diode
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
they ARE, but only in close proximity (at the junction). this is what creates the depletion region around the junction: electrons being attracted to holes and falling in. once the depletion region gets wide enough attraction stops.
When a diode is made (ie. NO current pass through the diode) then depletion layer is form between N & P.
i think in order to population inversion in depletion region. also the laser diodes must be degenerated.
S it has Clinton
Depletion region is the region where current carriers such as electrons and holes are absent.
The thickness of the depletion region or depletion layer (and there are other terms) varies as the design of the semiconductor. The layers in a semiconductor are "grown" (usually by deposition), and this can be controlled. The typical depletion region thickness in an "average" junction diode is about a micron, or 10-6 meters. Junction "construction" presents major engineering considerations to those who design and make semiconductors as there are many different kinds. A link is provided to the section on the width of depletion regions in the Wikipedia article on that topic.
space charge region in a diode or say a bjt for better understanding is same as the depletion region, both transition capacitance and depletion capacitance are the same c= (epsilon*A)/d ; where ... c is capacitance A is area and d is the depletion width the other type of capacitance is the diffusion capacitance c= (T*I)/(n*V) where ... c is the capacitance T is transition ti me I is the drift current n is emission coefficient ... its value is 1 for germanium and V is thermal voltage .. 26mv
if you exceed the max forward current the depletion region will become too small and will no longer allow any voltage through. it will also cause the diode to begin breaking down and will result in the death of the component.