0
The very word emitter explains this. Emitter needs more carriers to get emitted by it. Hence doping has to be heavy.
Wiki User
∙ 11y ago
Add your answer:
Earn +20 pts
Is a good absorber of radiation a good emitter or a poor emitter?
It is a good emitter, as you can not have a good absorber, which isn't a good emitter. Dark, Matt surfaces are good emitters and absorbers e.g. a saucepan.
Is germanium p type?
Only if doped that way.
Why emitter bias circuit is called self bias?
emitter bias provides a feedback to the circuit so that circuit remains in linear regionn
Why is a gunn diode called a diode?
A Gunn diode, also known as a transferred electron device (TED), is a form of diode used in high-frequency electronics. It is somewhat unusual in that it consists only of N-doped semiconductor material, whereas most diodes consist of both P and N-doped regions. In the Gunn diode, three regions exist: two of them are heavily N-doped on each terminal, with a thin layer of lightly doped material in between. When a voltage is applied to the device, the electrical gradient will be largest across the thin middle layer. Conduction will take place as in any conductive material with current being proportional to the applied voltage. Eventually, at higher field values, the conductive properties of the middle layer will be altered, increasing its resistivity and reducing the gradient across it, preventing further conduction and current actually starts to fall down. In practice, this means a Gunn diode has a region of negative differential resistance.
The pupil of your eye is a net absorber of radiant energy a net emitter of radiant energy neither a net absorber or emitter of radiant energy?
A net absorber of radiant energy.
Why emitter is heavily doped and base is lightly dopped working of p-n-p transistor?
Emitter is heavily doped because to provide charge carriers to Base & Collector region, Base and Collectors are lightly doped because to accept those charge carriers.
When diode is heavily doped?
base
How many doped regions in a Bipolar transistor?
3: emitter, base, collectorThere are three regions but to be absolutely picky I think only two of them need be doped.Nope: they MUST be doped NPN or PNP. If any are undoped it will not function as a transistor.
What is the difference between an ideal zener diode and practical zener diode?
Zener diode is heavily doped pn junction diode.
What is unipolar junction transistor?
The bipolar junction transistor is a current operated device with three terminals, emitter, base, and collector. There are two varieties, NPN and PNP. In the NPN variety, if the base is more positive than the emitter and that junction is conducting (greater than typically 0.7 volts), then the current through that junction will control a larger current through the collector emitter junction, when the collecter is also more positive than the emitter and that junction is also conducting. In the PNP variety, the same thing applies, but reverse positive to negative. You can operate in linear mode, where the base current controls the collector current, or you can operate in saturated (switched) mode, where the base current is enough to pass any collector current. This is all dependent on gain, also known as hFe, or beta.
Why zener diodes are heavily doped?
so that its depletion layer is narrower... when a high reverse voltage is applied across the junction the electron hole generation takes place.....
What is conductivity of n type semiconductor?
What's the silicon doped with? Antimony? Arsenic? Phosphrus? And, much more importantly, how heavily is the silicon doped? Are there 1020 electrons per meter-3 or is 1025 electrons per meter-3 more the order of the day? Graphite is used as a conductor in some electrochemical cells. Processed and compressed graphite is used as brush material in electric motors. Without more information, the best answer that can be offered is a bit general. What is the electrical conductivity of n-type silicon graphite? Pretty good.
What are Pinch resistors?
In the early 70s, making large resistors was expensive in silicon area. The diffusion used to make the bases of NPN transistors had the highest resistance per silicon area. When making NPN transistors, the emitter is diffused over the top of a base region. The resistance in this sub-surface base region which is "pinched" between an N doped epi collector below it and a N doped emitter region above it can have 10 times the normal base resistance. It was often used in non critical applications to save on silicon die size.
How do you calculate the current gain of a transistor?
Bipolar transistor current gain is also called "Beta," or the h-parameter "hfe." beta = current_out / current_in The beta of a BJT is mostly determined by the thickness of the Base region, and by the excess doping in the Emitter relative to the Base. A thin Base and a heavily-doped Emitter leads to a high value for current gain. In a BJT, beta = Ic / Ib In a FET, beta is usually taken as infinity, since no current flows in or out of the gate. Beta is an impirical number. It means nothing unless the Ic is known or the load. It can have a beta from 1000 to 10 it all depends on the load.
Resistivity range of semiconductors lies between the range of?
Semiconductors have bulk resistivity in the range of 10-4 ohm-cm (heavily doped) to 103 ohm-cm (undoped, or intrinsic).
What is the difference between phosphorus doped and gallium doped semiconductors?
phosphorus doped semiconductor will be N type.gallium doped semiconductor will be P type.There are also other differences due to the different size of the dopant atoms.
Why breakdown voltage increase in reverse biased p-n junction diode?
when the p-n junction is heavily doped p-n junction diode has very sharp breakdown voltage.
