| Hafnium(IV) oxide | |
|---|---|
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| IUPAC name |
Hafnium(IV) oxide
|
| Other names | Hafnium dioxide Hafnia |
| Identifiers | |
| CAS number | 12055-23-1  |
| Properties | |
| Molecular formula | HfO2 |
| Molar mass | 210.49 g/mol |
| Appearance | off-white powder |
| Density | 9.68 g/cm3, solid |
| Melting point |
2758 °C |
| Boiling point |
5400 °C |
| Solubility in water | insoluble |
| Hazards | |
| EU Index | Not listed |
| Flash point | Non-flammable |
| Related compounds | |
| Other cations | Titanium(IV) oxide Zirconium(IV) oxide |
| Related compounds | Hafnium nitride |
| (what is this?) (verify) Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) |
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| Infobox references | |
Hafnium(IV) oxide is the inorganic compound with the formula HfO2. Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of approximately 6 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal.
Hafnium(IV) oxide is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of graphite or carbon tetrachloride to give hafnium tetrachloride.
Applications
Hafnia is used in optical coatings, and as a high-k dielectric in DRAM capacitors. Hafnium-based oxides are currently leading candidates to replace silicon oxide as a gate insulator in field effect transistors.
The compound appears to have been chosen by both IBM and Intel as a substrate for future integrated circuits, where it may help in the continuing effort to increase logic density and clock speeds, or to lower power consumption, in computer processors.[1]
Because of its very high melting point, hafnia is also used as a refractory material in the insulation of such devices as thermocouples, where it can operate at temperatures up to 2500 °C.[2]
Hafnium Oxide is applied to carbon nanotube-based Non-Volatile RAM (NVRAM), where it replaces silicon dioxide as the insulating layer. This switch in material decreased the amount of time to access the memory from several milliseconds to just around 100 nanoseconds thereby potentially increasing the reading and writing to NVRAM by a factor of 100,000.[3]
References
- ^ "Intel Says Chips Will Run Faster, Using Less Power", New York Times, 2007-01-27
- ^ Very High Temperature Exotic Thermocouple Probes product data, Omega Engineering, Inc., retrieved 2008-12-03
- ^ Nanotube memory flashes past silicon NewScientist, Article written 05 February 2009 by David Robson
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