Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.[citation needed]
References
- ^ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 4–61, ISBN 0849305942
- ^ . doi:.
- ^ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 5–20, ISBN 0849305942
External links
- Extensive site on the physical properties of indium phosphide (Ioffe institute)
- InP conference series at IEEE
- Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier (2006 news)
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