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| Type | Public |
|---|---|
| Founded | January 2003 |
| Headquarters | Gueishan, Taoyuan County, Taiwan  |
| Industry | Semiconductors |
| Products | DRAM |
| Website | http://www.inotera.com |
Inotera Memories, Inc. (Traditional Chinese: 華亞科技, Hanyu Pinyin: huā yǎ kē jì), incorporated on January 2003, is a joint venture between Nanya Technology Corporation and Micron Technology, Inc.
Located in Hwa-Ya Technology Park in Gueishan, Taoyuan County, Taiwan, Inotera currently has two 300mm fabrication facilities with a combined capacity of approximately 130 thousand wafer starts per month, nearly 10% of the worldwide 300mm capacity for DRAM manufacturing. Inotera provides commodity DRAM memory foundry services on 300mm silicon wafers for its customers, Micron and Nanya Technology. All of Inotera’s manufacturing capacity is reserved for these two customers on an equal basis.
Inotera is designed to focus on operational excellence in mass production to manufacture DRAM memory products with high quality using state-of-the-art technology and to leverage its economies of scale in order to maximize its cost efficiency. The Company has reached full conversion to 70nm shrink technology in the end of June 2008 and started pilot production of Micron’s 50nm stack process technology from the third quarter of 2009 in order to further improve the productivity and to reduce manufacturing unit cost. Its total capacity of 130 thousand wafer starts per month is expected to be converted into 50nm stack technology by the end of 2010 with DDR3 products making up the majority of the production.
Inotera’s main products are currently the 512Mb DDR, 512Mb DDR2, 1Gb DDR2 and 1Gb DDR3 products featuring high density, high speed, and low power consumption.
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