Ion Beam Deposition (IBD) is a process of applying materials to a target through the application of an ion beam.
In an ion source source materials - gases or evaporated solids - are ionized using electron ionization or by application of high electric fields (Penning ion source). In cathodic arc systems, a high voltage arc is created that literally blasts ions out of a solid source material (used particularly for carbon ion deposition). The ions are then accelerated and focused using high voltage. Optional deceleration at the substrate can be employed to select well-defined deposition energies. This energy usually ranges from a few eV up to a few keV. Energy levels higher than this sends the ion further into the material, a process known as ion implantation.
Ion beams of select elements can be prepared by mass separation using magnetic fields leading to the deposition of films of high purity. By repeated fast switching of the magnetic field to different masses, and monitoring of deposition process by current integration a well-defined stoichiometry can be realized.
See also
References and further reading
- 4wave Inc.'s Ion Beam Deposition page with diagram of a typical IBD system
- Veeco produces some IBD systems.
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