| Isobutylgermane | |
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| IUPAC name |
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| Other names | Isobutylgermanium trihydride |
| Identifiers | |
| CAS number | [] |
| Properties | |
| Molecular formula | C4H12Ge |
| Molar mass | 132.78 g mol−1 |
| Appearance | Clear Colorless Liquid |
| Density | 0.96 g/mL |
| Melting point |
<-78 °C |
| Boiling point |
66 °C |
| Solubility in water | Insoluble in water |
| Related compounds | |
| Related compounds | GeH4 |
| Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) | |
| Infobox references | |
Isobutylgermane, (IBGe), (CH3)2CHCH2GeH3, is a germanium-containing liquid MOVPE (Metalorganic Vapor Phase Epitaxy) precursor - a novel alternative to the toxic germane gas. IBGe is useful in the deposition of pure Ge films and Ge-containing thin semiconductor films such as SiGe in strained silicon application, and GeSbTe in NAND Flash applications.
Contents |
Properties
IBGe is a non-pyrophoric liquid source for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of semiconductors. It possesses very high vapor pressure, and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (the onset of decomposition at ca. 325-350 °C).[1], coupled with advantages of extremely low carbon incorporation and substantially reduced main group elemental impurities in epitaxially grown germanium comprising layers such as Ge, SiGe, SiGeC, strained silicon, GeSb and GeSbTe.
Uses
Rohm and Haas (now part of The Dow Chemical Company), IMEM and CNRS have developed a novel process to grow germanium films on germanium at low temperatures in a Metalorganic Vapor Phase Epitaxy (MOVPE) reactor using isobutylgermane. The research targets Ge/III-V hetero devices.[2][3] It has been demonstrated that the growth of high quality germanium films at temperatures as low as 350 °C can be achieved[4][5]. The low growth temperature of 350 °C achievable with this new precursor has eliminated the memory effect of germanium in III-V materials. Recently IBGe is used to deposit Ge epitaxial film on a Si or Ge substrate, followed by the MOVPE deposition of InGaP and InGaAs layers with no memory effect, to enable triple-junction solar cells and integration of III-V compounds with Silicon and Germanium.
References
- ^ Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE; D.V. Shenai et al., Rohm and Haas Electronic Materials; Presentation at ICMOVPE-XIII, Miyazaki, Japan, June 1, 2006, and publication in Journal of Crystal Growth (2007)
- ^ Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films; Shenai-Khatkhate et al., Rohm and Haas Electronic Materials; Presentation at ACCGE-16, Montana, USA, July 11, 2005, and publication in Journal of Crystal Growth (2006)
- ^ Rohm and Haas Electronic Materials LLC, Metalorganics and Germanium Sources for MOVPE.
- ^ MOVPE growth of homoepitaxial germanium, M. Bosi et al. publication in Journal of Crystal Growth (2008)
- ^ Homo and Hetero Epitaxy of Germanium Using Isobutylgermane, G. Attolini et al. publication in Thin Solid Films (2008)
Further reading
- IBGe: Brief description from National Compound Semiconductor Roadmap.
- Élaboration et Physique des Structures Épitaxiées (LPN) Hétérostructures III-V pour l’optoélectronique sur Si: Article in French from LPN-CNRS, France.
- Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films; Journal of Crystal Growth, January 25, 2006.
- Ge Precursors for Strained Si and Compound Semiconductors; Semiconductor International, April 1, 2006.
- 摘要 随着Ge重要性的提高，需要寻找比GeH4更适用的前驱物。本文对用于应变Si和化合半导体集成电路的两种新型Ge前驱物的品质特性进行了探讨。当集成度不断增加,锗也变得日益重要。; Semiconductor International Chinese Edition, June 1, 2006.
- 歪みSiと化合物半導体向けの Geプリカーサ; Semiconductor International Japanese Edition, August 1, 2006.
- Rohm and Haas Electronic Materials Devises Germanium Film Growth Process; CompoundSemi News, September 23, 2005.
- High Purity Germanium Film; III-Vs Review, September 23, 2005.
- Development of New Germanium Precursors for SiGe Epitaxy; Deo Shenai and Egbert Woelk, Presentation at 210th ECS Meeting, Cancun, Mexico, October 29, 2006.
External links
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