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Metalorganic chemical vapor deposition (MOCVD) is a chemical vapor deposition process that uses metalorganic source gases. For instance, MOCVD may use tantalum ethoxide (Ta(OC2H5)5), to create tantalum pentoxide (Ta2O5), or Tetrakis Dimethyl Amino Titanium(IV) (TDMAT) to create titanium nitride (TiN). One may use Nickel Carbonyl metal organic to deposit pure Nickel at low temperatures 140-250 C.
See also
- Metalorganic vapor phase epitaxy (MOVPE), a specific kind of MOCVD used to grow crystalline substances.
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