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Spin torque transfer

 
Wikipedia: Spin torque transfer
 

Spin torque transfer writing technology is a technology in which data is written by re-orienting the magnetisation of a thin magnetic layer in a tunnel magnetoresistance (TMR) element using a spin-polarised current. An electrical current is generally unpolarised (consisting of 50% spin-up and 50% spin-down electrons), a spin polarised current is one with more electrons of either spin. By passing a current through a thick magnetic layer one can produce a spin polarised current.

At very small device scales it is possible that a spin polarised current can transfer its spin angular momentum to a small magnetic element. Spin torque transfer magnetic RAM (STT-MRAM) has the advantages of lower power-consumption and better scalability over conventional MRAM. Spin torque transfer technology has the potential to make possible MRAM devices combining low current requirements and reduced cost, however the amount of current needed to re-orient the magnetisation is, at present, too high for commercial applications and the reduction of this current density alone is the basis for a lot of current academic research in spin-electronics.

Hynix Semiconductor and Grandis formed a partnership in April 2008 to explore commercial development of STT-RAM technology.[1][2]

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Wikipedia. This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Spin torque transfer" Read more