0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.
Ge
for germanium it is 0.3 and for silicon it is 0.7
Si can be fabricated into ICs inexpensively, Ge cannot.Si maximum junction operating temperature is 150C, Ge is only 70C.Si is as cheap and plentiful as sand, Ge is more expensive and rarer.etc.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
silicon diodes Cut in voltage is 0.7 V.but the Germanium cut in voltage is 0.3 V that's why .............
Rd= Vt*c/I Vt=KT/q, K=Boltzmann constant C= constant 2 for si 1 for Ge I current through the diode
The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.
For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
Ge
becoz Si and Ge are indirect bandgap semiconductors. for lasing action direct bandgap semiconductors are required of the type In Ga As P
Mg. I is a non-metal and Si and Ge are metalloids.
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
for germanium it is 0.3 and for silicon it is 0.7
格雷格(ge lei si )or 格瑞格(ge rui si)