what is unbiase pnp transister
By Varying the impurity concentration
doping concentration,temperature are the major source of reverse current
Width of depletion layer is given by x = (2*ebsylum*Vb).5/(qN) x = width Vb = potential barrier q = charge of electron N = doping concentration. Thus increase in doping will reduce width of depletion layer.
increases with doping
Doping is of two types,..
doping is done based on segments and boundaries wise
The semiconductors where the doping concentration becomes equal or larger than the corresponding density of states, then it is referred to as degenerate semiconductors.
PMOS - (drain + source) = p-type doping NMOS - (drain + source) = n-type doping :)
European athletes cheat all the time and make up the majority of athletes who get busted for doping. Example: West Germany state sponsored doping program, Spanish governments doping coverup, doping in the Tour de France, rampant doping in european football etc.
at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
World Anti-Doping Agency was created in 1999.