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What is doping concentration?

Updated: 8/21/2019
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What is the doping concentration of emitter base and collector?

what is unbiase pnp transister


How the breakdown voltage of a particular diode can be controlled?

By Varying the impurity concentration


What are the sources of reverse current in a diode?

doping concentration,temperature are the major source of reverse current


How does doping effect the depletion layer in semiconductor?

Width of depletion layer is given by x = (2*ebsylum*Vb).5/(qN) x = width Vb = potential barrier q = charge of electron N = doping concentration. Thus increase in doping will reduce width of depletion layer.


What is the effect of doping on depletion region?

increases with doping


How many types of doping?

Doping is of two types,..


How is doping done in practical?

doping is done based on segments and boundaries wise


What is a degenerate simeconductor Draw an energy band diagram for a degenerate semiconductor?

The semiconductors where the doping concentration becomes equal or larger than the corresponding density of states, then it is referred to as degenerate semiconductors.


What type of doping have the drain and the source of a PMOS transistor?

PMOS - (drain + source) = p-type doping NMOS - (drain + source) = n-type doping :)


Did European athletes ever cheat in the olympics?

European athletes cheat all the time and make up the majority of athletes who get busted for doping. Example: West Germany state sponsored doping program, Spanish governments doping coverup, doping in the Tour de France, rampant doping in european football etc.


How intrinsic semiconductor can be made into extrinsic semiconductor?

at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.


When was World Anti-Doping Agency created?

World Anti-Doping Agency was created in 1999.