what is unbiase pnp transister
1st pin is emitter then collector and base
In a common emitter amplifier, the base-emitter current causes a corresponding collector-emitter current, in the ratio of hFe (beta gain) or collector resistance over emitter resistance, which ever is less. Since this ratio is usually greater than one, the differential collector current is greater than the differential base current. This results in amplification of the base signal. As you increase the base-emitter current, the collector-emitter current also increases. This results in the collector being pulled towards the emitter, with the result that the differential collector voltage decreases. This results in inversion of the base signal.
# parameter are usually the base current ib,collector current ic,emitter current ie,collector emitter voltagevce,base emitter voltagevbe,collector base voltagevcb which decide the operation &output of the transistor
The transistor has three regions, emitter,base and collector. The base is much thinner than the emitter while the collector is wider than both. However for the sake of convenience the emitter and collector are usually shown to be of equal size. The transistor has two pn junctions that means it is like two diodes. The junction between emitter and base may be called emitter-base diode or simply the emitter diode.The junction between base and collector may be called collector-base diode or simply collector diode. The emitter diode is always forward biased and the collector diode is always reverse biased.
Consider that current flow "enters" at the emitter and "exits" at the collector and base. Now, IE = IB + IC. Alternately, current "enters" at the collector and the base, and "exits" at the emitter. Now, IE = IB + IC
The percentage of doping in emitter is higher than collector region.hence large current is flow to emitter than collector.
The percentage of doping in emitter is higher than collector region.hence large current is flow to emitter than collector.
actually in the case of transistors there are two concepts that are often misleaded those are 1. order of doping 2. order of the size of various regions order of doping emitter>collector>base order of size of various regions collector>emitter>base now the reason for this as CB junction is reverse biased more heat is dissipated at this junction so if the collector junction has large area the heat can be dissipated easily there by the transistor is saved from the burning of CB junction
1st pin is emitter then collector and base
In a common emitter amplifier, the base-emitter current causes a corresponding collector-emitter current, in the ratio of hFe (beta gain) or collector resistance over emitter resistance, which ever is less. Since this ratio is usually greater than one, the differential collector current is greater than the differential base current. This results in amplification of the base signal. As you increase the base-emitter current, the collector-emitter current also increases. This results in the collector being pulled towards the emitter, with the result that the differential collector voltage decreases. This results in inversion of the base signal.
# parameter are usually the base current ib,collector current ic,emitter current ie,collector emitter voltagevce,base emitter voltagevbe,collector base voltagevcb which decide the operation &output of the transistor
The transistor has three regions, emitter,base and collector. The base is much thinner than the emitter while the collector is wider than both. However for the sake of convenience the emitter and collector are usually shown to be of equal size. The transistor has two pn junctions that means it is like two diodes. The junction between emitter and base may be called emitter-base diode or simply the emitter diode.The junction between base and collector may be called collector-base diode or simply collector diode. The emitter diode is always forward biased and the collector diode is always reverse biased.
some of emitter current goes out base instead of collector
Emitter, Collector and Base cutoff region, saturation region, and liner region
The collector base depletion zone is wider than the emitter base depletion zone.
Maybe you ought to not take emitter and base into consideration prior to concluding
Consider that current flow "enters" at the emitter and "exits" at the collector and base. Now, IE = IB + IC. Alternately, current "enters" at the collector and the base, and "exits" at the emitter. Now, IE = IB + IC