It depends on the particular diode. They range from around a hundred volts to several thousand volts, depending on what you want to spend.
A few microamps
.7V
Property Germanium silicon Depletion layer 0.15V 0.6V Forward Current milli amperes tens of amperes Reverse leakage micro amperes nano metres Current
The IN5408 diode is an ordinary silicon diode. It has a 3 amp forward current rating, and a 1000 volt peak reverse voltage rating.
As close to virtually zero volts as is possible: the current will very small but there will be current. This depends on two things: the material that is used to make the diode, and whether the voltage is applied in a forward or reverse direction to the diode. A typical silicon diode will pass forward current above 0.6 V and pass no reverse current until a much higher voltage is applied (check the rated peak inverse voltage PIV)
Because it is controlled by the gate current
The symbol 'A' indicates that this device is made from germanium . as you may know germanium has less cut in voltage so this device is used for low power signal or for signal processing. also the leakage current or reverse saturation current of germanium is greater than silicon.
Reverse saturation current of silicon is in nano ampear therefore it is prefered over germanium
Property Germanium silicon Depletion layer 0.15V 0.6V Forward Current milli amperes tens of amperes Reverse leakage micro amperes nano metres Current
The built is voltage would be lower than silicon diode,more leakage or reverse saturation current,poor thermal stability,high noise and greater conduction in comparison to silicon diodes.
The IN5408 diode is an ordinary silicon diode. It has a 3 amp forward current rating, and a 1000 volt peak reverse voltage rating.
Germanium has four number of shells while Silicon has three number of shell. therefore for germanium less energy is required to move the electron from valence band to conduction band if compared to silicon. So at room temperature for germanium their are more number of electrons present in conduction bond hence more number of holes present in the valence energy band. Due to movement of holes reverse saturation current is produced. Their is more number of hole movement in germanium comparatively therefore reverse saturation current is more than silicon for germanium. You may refer to Electronic Devices and Circuits by Allen Mottershead Regards, Zain Ijaz UCTI, Malaysia Mechatronic Engineer.
If it's a silicon zener diode, it conducts in the reverse direction after the rated voltage is reached. Otherwise, it only conducts in the forward bias direction.
no it has glue in it
Because the space charge region or depletion region is small in germanium compared to silicon hence leakage current is more in germanium than silicon
As close to virtually zero volts as is possible: the current will very small but there will be current. This depends on two things: the material that is used to make the diode, and whether the voltage is applied in a forward or reverse direction to the diode. A typical silicon diode will pass forward current above 0.6 V and pass no reverse current until a much higher voltage is applied (check the rated peak inverse voltage PIV)
because lekage current of silicon is less than germenium
silicon is a better conductor of electric current than sulfur is.
hi