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Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
because it can withstand more temperature compared to germanium and relatively cheaper and it is available abundantly in sand where as germanium is rare so Si has advantages than Ge though its conductivity is more compared to Si
Si can be fabricated into ICs inexpensively, Ge cannot.Si maximum junction operating temperature is 150C, Ge is only 70C.Si is as cheap and plentiful as sand, Ge is more expensive and rarer.etc.
For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
Ge
Mg. I is a non-metal and Si and Ge are metalloids.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
for germanium it is 0.3 and for silicon it is 0.7
格雷格(ge lei si )or 格瑞格(ge rui si)
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
Si ge 32A he yi ge xiang jiao shao nian - 1996 is rated/received certificates of: Hong Kong:IIB
Ge and Si are in the same group