Transition capacitance is the capacitance that is accumulated between two terminals as an electrical charge is carried between them. In a diode, this is the diffusion from anode to cathode of a diode in forward bias mode.
just wanted 2 know for reference
space charge region in a diode or say a bjt for better understanding is same as the depletion region, both transition capacitance and depletion capacitance are the same c= (epsilon*A)/d ; where ... c is capacitance A is area and d is the depletion width the other type of capacitance is the diffusion capacitance c= (T*I)/(n*V) where ... c is the capacitance T is transition ti me I is the drift current n is emission coefficient ... its value is 1 for germanium and V is thermal voltage .. 26mv
1. Transition capacitance 2. Diffusion capacitance 3. Space charge capacitance 4. Drift capacitance
Junction capacitance is used to take the ripple out of DC circuits primarily. The other is used in voltage doublers or step ups as a storage.
Capacitance is an ability to store an electric charge. "If we consider two same conductors as capacitor,the capacitance will be small even the conductors are close together for long time." this effect is called Stray Capacitance.
The reciprocal of capacitance is called electrical elastance, the (non-standard, non-SI) unit of which is the daraf.
Transition capacitance : A reverse biased PN-junction has a region of high resistivity (depletion layer) sandwiched in between two regions of relatively low resistivity. The P-N regions act as the plates of a capacitor and the depletion layer acts as the dielectric This is known as the transition capacitance or depletion capacitance. Diffusion capacitance : It is the capacitance due to transport of charge carriers between two terminals of a device like the forward biased PN junction. In a semiconductor device with a current flowing through it (for example, an ongoing transport of charge by diffusion) at a particular moment there is necessarily some charge in the process of transit through the device. If the applied voltage changes to a different value and the current changes to a different value, a different amount of charge will be in transit in the new circumstances. The change in the amount of transiting charge divided by the change in the voltage causing it is the diffusion capacitance. The adjective "diffusion" is used because the original use of this term was for junction http://www.answers.com/topic/diode, where the charge transport was via the diffusion mechanism.
Capacitance is the ratio of charge to voltage, and is a constant. So, nothing will happen.
So-called NON-transition metals is not a defined group of elements, other than "All other elements that are NOT transition elements".
Transition elements may be defined as those elements which have partialy filled d and f subshells in atomic state so d and f block elements called transition elements.
Capacitance in mosfet is of three types: gate capacitance diffusion capacitance routing capacitance Gate capacitance: limits the speed of the device t which it can be operated Diffusion capacitance: It is the capacitance due to charge carriers between drain and source. Routing capacitance: It is the capacitance of the metal which is deposited on the top of oxide layer.
Those elements are called transition elements
It was so smooth that it was called "The Velvet Revolution"Hope this helped! =P