(electronics) A field-effect transistor in which current between the ohmic source and drain contacts is carried by free electrons in a channel consisting of n-type gallium arsenide, and this current is modulated by a Schottky-barrier rectifying contact called the gate that varies the cross-sectional area of the channel. Abbreviated GaAs FET.
gallium arsenide field-effect transistor
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(′gal·ē·əm ′ärs·ən′īd ′fēld i¦fekt tran′zis·tər)
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- Microwave solid-state devices (physical electronics)
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