Difference between Schottky Barrier Diode and P-N Junction Diode is as following...
Schottky Diode1) Usually using the aluminum metal which is trivalent element.
2) Depletion layer is thinner than the p-n junction diode.
3) Forward threshold voltage is smaller than p-n junction diode(0.1V).
4) The junction capacitance is lower than p-n junction diode.
P-N Junction Diode1) Trivalent impurity is added to the pure silicon structure.
2) Depletion layer is wider than Schottky diode.
3) Forward threshold voltage is higher than Schottky diode(0.6V)
4) The junction capacitance is higher than Schottky diode.