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Schottky was the physicist who predicted the Schottky effect. The effect was first exploited in the electron guns that were used much the most often in the old television tubes. Schottky predicted that electrons would find it easier to 'escape' the negatively charged cathode of one of these tubes. A Schottky solid-state diode exploits this effect at a metal to semiconductor junction. In contrast a semiconductor to semiconductor junction involves minority carriers as well, which tend to collect at the junction. Because no charge collects at the junction of the Schottky device it tends to be faster. However, it uses more power.

Low power Schottky devices were developed to show greater resistance to the circuit to reduce their power consumptions. Subsequent higher resistance (and lower power) devices have since been developed.

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Schottky was the physicist who predicted the Schottky effect. The effect was first exploited in the electron guns that were used much the most often in the old television tubes. Schottky predicted that electrons would find it easier to 'escape' the negatively charged cathode of one of these tubes. A Schottky solid-state diode exploits this effect at a metal to semiconductor junction. In contrast a semiconductor to semiconductor junction involves minority carriers as well, which tend to collect at the junction. Because no charge collects at the junction of the Schottky device it tends to be faster. However, it uses more power.

Low power Schottky devices were developed to show greater resistance to the circuit to reduce their power consumptions. Subsequent higher resistance (and lower power) devices have since been developed.

Please see the link.

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Alexander Schottky was born in 1969.

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Alexander Schottky is 180 cm.

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Friedrich Schottky was born on July 24, 1851.

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Friedrich Schottky was born on July 24, 1851.

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