there is difference between doping levels.In normal PN junction
diode we add 1 impurity for 108 atoms where as in tunnel diode we
add 1 impurity for 103 atoms.there is a probability that electrons
may penetrate through barrier.So will not disappear
in tunnel diode we get maximum current before barrier disappear
where as we get maximum current after break down(there is no
barrier)
this effect lies within a certain voltage limit of 0.4V.
When we consider the energy band structure in case of PN
junction diode the fermi level lies inside the forbidden energy
gap.In case of tunnel diode,the fermi level lies outside the
forbidden energy band.
In tunnel diode, there is a topic about negative resistance
region where as we cannot discuss it in PN junction diode.
ur friend,
uma.