Tunnel diode is a degenerative diode which works under quantum mechanism of tunneling. It exhibits a negative resistance region. They are used in high speed switching circuits.
Tunnel diode operation:
At equilibrium condition, energy bands are crossed to keep Ef (fermy level energy) constant. When a small forward or reverse bias is applied the filled and empty energy states will come opposite to each other and tunneling takes place. The depletion region will be sharp if the doping is high.
Reverse bias is applied:
When reverse bias is applied Efp will come above Efn. The filled states of p will come opposite to empty states of n. So tunneling takes place from p to n. If reverse bias is increased further then tunneling and reverse current increases.
tunnel diodethe doping level of the tunnel diode is high when compared with the rectifier diodeit exhibits negative resistancerectifier diodethe doping level of rectifier diode is low when compared with the tunnel diode
A thin junction diode which exhibits negative resistance under low forward bias condition is known as tunnel diode.
A thin junction diode which exhibits negative resistance under low forward bias condition is known as tunnel diode.
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because that the tunnel diode is a standard pn junction diode in many respect except its highly doped pn junction so it has some characteristics in the negative resistance region another that its a standard diode
Yes, the forward voltage drop of a Schottky diode is usually more than the forward voltage drop of a tunnel diode. A Schottky diode voltage drop is between approximately 0.15 to 0.45 volt. The interesting thing that makes a tunnel diode different from other diodes is its "negative resistance region" with a "peak current" around 0.06 volt and a "valley current" around 0.30 volt.
0.1 micron
A diode when forward biased will allow the flow of current while reverse biasing will cut off the flow of current. It is the basic building block of any semiconductor.
negative resistance region
A tunnel diode.
The diode that has a negative resistance region in its voltage-current curve.
there is difference between doping levels.In normal PN junction diode we add 1 impurity for 108 atoms where as in tunnel diode we add 1 impurity for 103 atoms.there is a probability that electrons may penetrate through barrier.So will not disappear in tunnel diode we get maximum current before barrier disappear where as we get maximum current after break down(there is no barrier) this effect lies within a certain voltage limit of 0.4V. When we consider the energy band structure in case of PN junction diode the fermi level lies inside the forbidden energy gap.In case of tunnel diode,the fermi level lies outside the forbidden energy band. In tunnel diode, there is a topic about negative resistance region where as we cannot discuss it in PN junction diode. ur friend, uma.