bag
HI guys I have a question:what is SAP with respect to SCADA system?
If the cost can be tracked towards a cost object, then it is called overhead absorption. If the cost can not be tracked with respect to a specific cost center or cost object, then the entire cost is distributed to all the cost centers, based on the usage ratio. This is called Overhead apportionment. UdhayAnand AVB
Wavelet tree is recursively built applying decomposition and approximation filter only to the (father wavelet) approximation filter output at each step (or level). Wavelt packets, instead, are constructed by applying both filters to approximation and decomposition filter output resulting in a 2^(n+1)+1 nodes with respect to 2(n+1)+1 nodes of standard discrete wavelet tree
- The ratio of the dc collector current (IC) to the dc base current (IB) is thedc beta (bDC).- bDC is called the gainof a transistor:bDC = IC/IB- Typical values of bDC range from less than 20 to 200 or higher.- bDC is usually designated as an equivalent hybrid (h)parameter:hFE = bDC- The ratio of the collector current (IC) to the dc emitter current (IE) is the dc alpha (aDC). This is a less-used parameter than beta.aDC = IC/IE- Typical values range from 0.95 to 0.99 or greater.- aDC is always less than 1.- This is because IC is always slightly less than IE by the amount of IB.- From graph above we can see that there are 6 important parameters to be considered:i) IB: dc base current.ii) IE: dc emitter current.iii) IC: dc collector current.iv) VBE: dc voltage at base with respect to emitter.v) VCB: dc voltage at collector with respect to base.vi) VCE: dc voltage at collector with respect to emitter.- VBB forward-biases the BE junction.- VCC reverse-biases the BC junction.- When the BE junction is forward biased, it is like a forward biased diode:VBE ? 0.7 V- But it can be as high as 0.9 V (and is dependent on current). We will use 0.7 V from now on.- Emitter is at ground. Thus the voltage across RB isVR(B) = VBB- VBE- AlsoVR(B) = I­RRB- Or:I­RRB = VBB- VBE- Solving:IB = (VBB- VBE)/RB- Voltage at collector with respect to grounded emitter is:VCE = VCC - VR(C)- Since drop across RC is VR(C) = ICRC the voltage at the collector is also:VCE = VCC - ICRC- Where IC = bDCIB. Voltage across the reverse-biased collector-bias junction isVCB = VCE - VBEthank you
Sir I respect your question but dont you have other things to do in life ??
forward caste with high status and respect
how communication cycle in an organisation
It is about Honour and Respect.
f
No. The same rules apply as in the full game in that respect
madam or ma'am
With respect, I don't understand this question. Please would you explain what you are getting at.
do your own homewor
A forward-biased diode has a positive DC on its anode with respect to its cathode.
I need a specific answer.
it is not necessary that always positive voltage should act as a forward bias voltage , it is the potential difference between cathode and anode that makes it forward or reverse biased .it the anode(p- doped material) positive with respect to cathode(n- doped material) --> forward biasedit the anode(p- doped material) negative with respect to cathode(n- doped material) --> reverse biasedex.anode - 5v cathode - 3vanode - 1v cathode - -2vboth the examples are forward biased.
It is because the emitter is the source of charge carriers and we require to move these charge carriers into base which is obtained only by forward baising the base emitter junction.