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I;m pretty sure HEMT is a medical word. So go to Web- Md to find out the definition. Or Websters Online. HEMT(High Electron Mobility Transistor) is a type of field effect transistor, it improves electron mobility using ternary semiconductors.
1450 at 300k
Mobility means how quickly an electron can move through a metal or semiconductor when an electric field is applied.
mu is the mobility(electrons or holes ) of the current carriers in the semiconductors. mu-e being electron mobility and mu-a being the hole mobility.
Drift velocity Vd = acceleration x relaxation time So Vd = (E e / m) * t Now Vd / E is defined as the drift velocity per unit electric field and known to be mobility of free electron Hence mobility = (e/m) x t Thus mobility will be different in different material as it depends on relaxation time. e/m is the specific charge of electron which is a constant value equals to 1.759 x 1011
I am assuming the charge carries are electron and hole in an semiconductor. the mobility of charge carriers can be understood as the easy with which the carrier can move in a semiconductor. the mobility depends on many factors like the semiconductor material (because of the crystal structure), semiconductor specimen temperature, the effective mass of carrier, the applied electric field across the specimen. in general if we compare the mobility of electron with hole in a silicon semiconductor, the mobility values at room temperature is some thing around 1350 cm^2 per volt sec and 450 cm^2 per volt sec for electron and holes. that is mobility of electron is 2-3 time more than the holes in silicon.
because when current is incresing then mobility of an eletron is also incesed so on collesion with an electron to another electron heat is more dissipated.
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Amps or AmperesYou would use the unit of electrical current - the ampere.amperesThe Ampere.1 Ampere = around 6,241,000,000,000,000,000 electrons per second (6.241 x 1018)passing a point in the conductor.
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electrons have less effective size than that of holes(which actually are not real)...formula says m(mobility)=drift velocity/electric field=et/m where t is relaxation time.. so mobility is inversely proportional to mass hence e has more mobility.