How does doping change the properties of silicon and germanium?

Silicon has several advantages over germanium: easier to process - silicon dioxide coating can be used as doping mask, germanium dioxide is not stable to use. etc. easier to package - silicon dioxide or silicon nitride passivation can protect junction edges from contamination allowing cheap molded plastic packaging, germanium cannot be passivated requiring expensive hermetically sealed metal or glass packaging to prevent junction edge contamination. wider temperature range - silicon will operate at junction temperatures up to 150C, germanium will only operate at junction temperatures up to 60C. etc.

A doping essentially done for change in the properties of materials without change in their crystal structure. In an alloy the structure and properties of the developed alloy may be very different from the parent materials.

Pure silicon is intrinsic. It has a high resitivity which means it is a poor conductor of electricity in this state. The dopant that is introduced during the doping process can be arsenic, boron or phosphorous. These are the traditional choices to dope the intrinsically pure silicon. After the pure silicon becomes doped its electrical properties change. The main change is it has a lower resistivity and will conduct electricity. This is why silicon is called a semiconductor.

A semi conductor is made up of a semi conducting material, i.e silicon ,germanium etc. by doping, an intrinsic semi conductor can be converted into a p and n junctions.

Pure silicon is an insulator, but it can be made a semiconductor by 'p' or 'n' doping.

Very. Doping determines the conductivity, pure silicon is a good insulator.

in silicon or germanium, the valence shell contain 4 electrons. in order to attain stability, they need 4 more electrons, so we doping it either with trivalent or pentavalent impurities. if we are doping semiconductor with any of these, we call it as an extrinsic semiconductor if we are using pentavalent impurity such as phosphorous, there will be an extra electron,which will go to conduction band. we know electron has negative charge therefore we call it as n-type semiconductor

You mustn't forget the atomic nuclei. With p-type doping, the doping atoms will have 3 electrons with which to bond, instead of the 4 that silicon has, but the doping atom will also have one fewer proton in its nucleus (assuming simplest case) than silicon.

electrons or holes depending on doping, as in any semiconductor.

intrinsic semiconductor : semiconductors which are in its extremely pure form are known as intrinsic semiconductor example : silicon, germanium extrinsic semiconductor : when a small amount of doping is added to intrinsic semiconductor it becomes extrinsic semiconductor

An n-type semiconductor is formed by doping a pure semiconductor (silicon or germanium, for example) with atoms of a Group V element, typically phosphorus or arsenic. The dopant may be introduced when the crystal is formed or later, by diffusion or ion implantation.

Diodes are mainly made up of silicon like semiconductors. It has a crystalline structure. Different types of diodes are available. For example pn junction, zener, point contact, tunnel, photo diode, LED, shockley, etc. When silicon is there it has 4 electrons in the valence shell and is bonded with 4 electrons of adjacent silicon atoms. By doping, that is adding impurities (group 13 or group 15) elements, we can increase the conductivity of a semiconductor by introducing p and n regions which shows holes and electrons were the majority charge carriers. The semiconductor used in very early crystal diodes used as detectors in radios was galena (lead sulphide crystal) and used a stiff sharply pointed "cat's whisker" point contact. Naturally present impurities in the galena made doping unnecessary. During WW2 germanium crystal point contact diodes were introduced for use in military radios. Naturally present impurities in the germanium made doping unnecessary. Germanium junction diodes were introduced in the early 1950s (along with germanium junction transistors), silicon junction diodes and transistors were introduced in the late 1950s and took most of the market in the early 1960s.

Any Pentavalent or Trivalent atom can be added to Silicon to create an "N" type or "P" type Material respectively. Which is used to create a PN Junction. Examples of Pentavalent atoms would be arsenic, antimony, and phosphorus, these Pentavalent atoms would be used to create an "N" Type material. Examples of Trivalent atoms are aluminum, boron, and gallium. Trivalent atom would be used to create "P" type material. I don't know why you would dope germanium, unless your talking about very old technology. Germanium use has slowed to a crawl since the discovery of intrinsic (pure) silicon.

Computer chips are essentially semiconductor devices, and as a result use silicon which has a number of properties that make it an excellent semiconductor. It is a tetravalent metalloid, like carbon, and can both share or donate the outer four electrons. It is less reactive than carbon, and maintains its semiconductor nature at higher temperatures than others like germanium. It is also very abundant in the earth's crust and is easily manufactured into large workable crystals. By doping regions of the silicon with elements like gallium or antimony you can alter the electrical characteristics, creating complex electrical structures.

It does not alter the atomic structure of the silicon at all, what it alters is the balance of bulk valence band and conduction band electrons in the crystal of silicon thus altering its bulk conductivity.

SILICON or common sand with doping of the right ratio to make a transistor. three layers of semiconductor material

Knowing the properties of atoms can allow the creation of new technologies. For example, doping silicon with impurities can allow the creation of semiconductors with superior/unique properties. These properties are a direct consequence of the electronic structure of the atoms, which in turn influences the band structure of the semiconductor. Thus, the knowledge of atomic properties can be used to produce useful materials.

I presume that we are here talking about a silicon semiconductor. The point of using a group 3 or a group 5 element is to use something that does not interfere too much with the crystal structure of silicon, but that has an extra electron for n-type doping, or absence of an electron for p-type doping. Thus for p-type doping we would use aluminium or gallium or scandium, because each of these has only 3 valence electrons instead of 4, while for n-type doping we would use phosphorus or arsenic or antimony, because these are elements with 5 valence electrons.

Sheng S. Li has written: 'Semiconductor physical electronics' -- subject(s): Semiconductors, Solid state physics 'The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon' -- subject(s): Electric properties, Electric resistance, Electron mobility, Semiconductor doping, Silicon

Examples of p-type semiconductors are silicon doped with gallium and silicon doped with boron. P-type semiconductor refers to positive type doping of semiconductor.

First you must obtain ultra ultra pure silicon. Then you contaminate it a very precisely controlled manner with very tiny amounts of other carefully selected elements that will produce the desired changes to its electrical properties. There are many means to produce this controlled contamination that is called doping: alloy melting diffusion ion beam bombardment followed by thermal annealing etc.

Yes, because it's part of the silicon family. It's silicon dioxide. I'm still figuring out if you need a machine or not

The familiar semi conducting materials are Silicon (Si) and Germanium (Ge) These belong to fourth group as they have four valence electrons. Now we need doping material whose valency may be either 5 (one more than 4) or trivalent (one less). By using one less ie trivalent material we can produce P type Si or P type Ge. Hence we add Boron, which is trivalent just as Aluminium along with Ge or Si.

because they change a materiel's property from it original form (pure form), to a different property from due to doping fig of semiconductor distrot

4.1 for N+ poly-silicon and 5.2 for P+ poly-silicon. That is supposedly the "classical CMOS value." These values depend on doping concentration in the poly-silicon and the specific sample. Thus, it may be best to determine them yourself if you need a more exact value. Source Silicon-on-insulator technology: materials to VLSI pg.136 By Jean-Pierre Colinge