electrons or holes depending on doping, as in any semiconductor.
Germanium has a smaller bandgap compared to silicon, leading to higher intrinsic carrier concentration and hence greater leakage current. Additionally, germanium has a higher intrinsic carrier mobility, which can further contribute to increased leakage current compared to silicon.
Each has four valence electrons, but germanium will at a given temperature have more free electrons and a higher conductivity. Silicon is by far the more widely used semiconductor for electronics, partly because it can be used at much higher temperatures than germanium.
The potential barrier of germanium is typically around 0.3 to 0.7 electron volts (eV) when used as a semiconductor in electronic devices. This barrier helps control the flow of current in the material and is crucial for its behavior as a semiconductor.
Biasing means providing a voltage that overcomes or restricts the flow of carrier in semiconductor. No current will flow when any semiconductor is ubiased
A semiconductor device that produces electric current through the photo-voltaic effect is a solar cell. When sunlight shines on the cell, it creates an electric current by releasing electrons from the material. This electric current can then be harnessed for various applications, such as generating electricity for homes or powering electronic devices.
no,drift current depends upon electric field where as carrier concentration lead to diffusion current
semiconductor
semiconductor
electronics engineering is the branch of engineering which deals with the flow of current in a semiconductor devices/components. Semiconductor devices/components are those element which made from semiconductors like silicon germanium GaAs and other material. they are widely using in current generation.
A semiconductor, such as silicon or germanium, fits this description. Semiconductors have electrical conductivity between that of insulators and conductors. They can be controlled to switch between conducting and insulating states, making them essential for modern electronics.
The higher leakage current in germanium compared to silicon is mainly due to its lower bandgap energy, which allows more thermally generated carriers to flow through at room temperature. Additionally, germanium has lower electron mobility and higher intrinsic carrier concentration than silicon, contributing to increased leakage current.
The FET is a semiconductor device with the output current controlled by an electric field. Since the current is carried predominantly by one type of carriers, the FET is known as a unipolar transistor.