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Why silicon has more barrier potential than germanium?
Silicon has a larger band gap than germanium, leading to a higher barrier potential. This is due to the differences in the electronic structure of these two materials. Silicon's larger band gap means that it requires more energy to move electrons across the junction, resulting in a higher barrier potential compared to germanium.
Why depletion region is small in germanium compared to silicon?
The depletion region is smaller in germanium compared to silicon because germanium has a lower bandgap energy, meaning that charge carriers can easily cross the depletion region and recombine on the other side. This results in a smaller built-in potential and a smaller depletion region in germanium.
How many electrons does germanium have?
Germanium has 32 electrons.
What is a germanium's atomic number How many electrons does germanium have?
Germanium Atomic number is 32 and the number of electrons is 32
How many protons are in the element germanium?
Germanium has 32 protons.
Compare the characteristics of a silicon and germanium diode?
Potential barrier of silicon is 0.7, whereas potential barrier of germanium is 0.3
What is the typical value of the barrier potential for a germanium diode?
The typical value of the barrier potential for a germanium diode is around 0.3 to 0.4 volts. This barrier potential is the voltage required to overcome the potential barrier at the junction of the diode and allow current flow in the forward direction.
What is the value of the barrier potential for a germanium diode at different temperatures?
The barrier potential of a germanium diode typically decreases with increasing temperature due to the increase in intrinsic carrier concentration. At room temperature (around 300K), the barrier potential is usually around 0.3-0.4V for a germanium diode.
Why silicon has more barrier potential than germanium?
Silicon has a larger band gap than germanium, leading to a higher barrier potential. This is due to the differences in the electronic structure of these two materials. Silicon's larger band gap means that it requires more energy to move electrons across the junction, resulting in a higher barrier potential compared to germanium.
What is the cut in voltage of germanium and silicon diodes?
cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.
Why silicon potential barrier is higher?
The potential barrier in silicon is higher due to its relatively larger energy bandgap compared to other materials, such as germanium. This bandgap, approximately 1.1 eV for silicon, requires more energy to excite electrons from the valence band to the conduction band, thus creating a larger potential barrier for charge carriers. Additionally, silicon's crystal structure and doping levels influence the height of the potential barrier, affecting charge transport properties in semiconductor devices.
Why germanium has less barrier potential than silicon?
germanium has great intrinsic concentration at room temperature,hence conduction is great in germanum compared to silicon, and resistance decreases in germanum and hence built in potentail also less in germanum compared to silicon.built in potential of silicon is 0.7v built in potential of germanum is 0.3v. 1)intrinsic concentration of germanium at room temperature is 2.5*10^13 atoms/cm^3. 2)intrinsic concentration of silicon at room temperature of 300k is 1.5*10^10 atoms/cm^3.
What is meant by 0.3 volts for germanium and 0.7 volts for silicon?
== When we make a semiconductor junction (a p-n junction), the electric fields force charges to shift creating what is called a depletion region. This depletion region forms a potential barrier across the junction. This potential barrier has a voltage associated with it, and that voltage is 0.3 volts (approximately) for germanium semiconductor material, and 0.7 volts (approximately) for silicon semiconductor. The terms we apply to this barrier potential are the built-in voltage (or potential), junction voltage (or potential), and contact potential. Use the link below to check facts and review some other closely related material.
What would cause the barrier potential to decrease from 0.7v to 0.6v?
The forward voltage of a semiconductor junction, silicon or germanium, changes by -2mV for every rise in temperature of 1 degree C, so your friend is correct
Why does a diode not conduct until the cut in voltage is reached?
Cut in voltage is the minimum voltage required to overcome the barrier potential. In other words it is like trying to push a large boulder....it may not be possible to push a large boulder by one person but it may be done if 2 or more people try to push it together depending on the size of the boulder.....similarly....the charge carriers in the barrier region have a potential energy of about 0.6V for Silicon and about 0.2V for Germanium. so in order for the diode to conduct, it is required to overcome the potential of the charge carriers in the junction barrier region and hence only if a potential more than that of the barrier potential (cut off voltage) is applied, then electrons flow past the junction barrier and the diode conducts.
Why potential across pn junction is called potential barrier?
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
What is germanium 2 bicarbonate?
Germanium(II) bicarbonate, also known as germanium bicarbonate, is a chemical compound composed of germanium, carbon, hydrogen, and oxygen. It typically exists as a white crystalline solid and is formed when germanium(II) oxide reacts with carbonic acid or bicarbonate. This compound is of interest in various fields, including materials science and potential medical applications, although its use is still under research. It is important to handle germanium compounds with care due to their potential toxicity and environmental impact.
