BJT(Bipolar junction Transistor)
-It is bipolar device -meaning both electron and holes are responsible for conduction.
-It is mainly used for amplification and switching purposes.
-It is current controlled device.
MOSFET(Metal Oxide Semiconductor Field Effect Transistor)
-It is unipolar device -meaning only one of the charge carriers is responsible for conduction.
-It has very high input resistance.Due to this reason it is used in initial stage of Operational amplifier.
-It is voltage controlled device.
actually I prefer a bjt
A MOSFET (metal oxide semiconductor field effect transistor) can be used INSTEAD of a BJT (bypolar junction transistor, so transistor is redundant in your question), if the circuit in question is modified to allow it and the MOSFET is chosen appropriately. BJT's will usually have a higher intrinsic gain, but have lower input resistance. Also a BJT in general will work better at higher frequencies than a MOSFET (unless you choose a high frequency MOSFET) due to the capacitive nature of MOSFETs.
supposed to be MOSFET. but i also depends on your working freq.
It helps us to select the Q - point of the BJT, MOSFET etc.
generally bjt is faster than fets...because of many intrinsic junction capacitances between ...source and drain and bulk and gate,,,.. but now a days due to advancement in scaling fet is reduced in size sooo much that it became faster than bjt... mosfet is faster because of scaling. small channel length. even though it is slower but distance to be travelled is less
Advantages:- 1- mosfet are small compare to bjt's so it fabricated easily and space saving scheme on the ic's 2- mosfet's input impedance are very high so they do not load the circuits. loading effect doesn't arise. 3- operating frequency is very high so may be used at higher frequencies. 4- used in digital circuits for it's reliability. 5- effect of noise is less than bjt. so high signal to noise ratio. 6-mosfets are unipolar devices so reverse saturation current doesn't exist. 7- it consume less D.C power rather than BJT. Disadvantages:- handling is not easy- Mosfet is very sensitive to electrostatic charge so it may be destroy when you touch the pins of a mosfet devices by hand. trans conductance is low than BJT.
Advantages:- 1- mosfet are small compare to bjt's so it fabricated easily and space saving scheme on the ic's 2- mosfet's input impedance are very high so they do not load the circuits. loading effect doesn't arise. 3- operating frequency is very high so may be used at higher frequencies. 4- used in digital circuits for it's reliability. 5- effect of noise is less than bjt. so high signal to noise ratio. 6-mosfets are unipolar devices so reverse saturation current doesn't exist. 7- it consume less D.C power rather than BJT. Disadvantages:- handling is not easy- Mosfet is very sensitive to electrostatic charge so it may be destroy when you touch the pins of a mosfet devices by hand. trans conductance is low than BJT.
tel me the devices like diode,mosfet,bjt....etc.
1-BJT is bipolar while JFET is unipolar. 2-BJT has low input impedence while JFET has high input impedence. 3-JFET has low power discipation as compared to BJT. 4-JFET has low noise as compared to BJT. 5-BJT is current controlled while JFET is voltage controlled. 6-JFET is mostly used in digital circuits.
Open drain or collector means ,collector and drain terminal of BJT and MOSFET will be left open during implementation/fabrication.They will not be connected from Supply Vcc or VDD.
The terminals on a MOSFET are called the "Source", "Drain", and "Gate". Just as with a bipolar junction transistor (BJT) the direction of current flow will be based on the doping configuration of the semiconductor. In a MOSFET, the doping configuration can be either n-channel or p-channel, but with MOSFETS, they also come in a "normally on" or "normally off" configuration, which is specified by being either "depletion mode" or "enhancement mode", respectively.
either field effect (JFET, MOSFET) or junction (BJT) or point contact (usually considered obsolete)either small signal or high powereither electron majority carrier (N-channel FET, NPN BJT) or hole majority carrier (P-channel FET, PNP BJT)either linear (used in amplifier and oscillator circuits) or switching (used in digital logic circuits)etc.