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How much dopant is present in 147kg of semiconductor with a dopant concentration of 3.50ppm by mass?
Wiki User
∙ 10y ago
[3.50 / 1,000,000] * 147 kg = ....... kg (finish it by yourself) = 514.5 mg
Wiki User
∙ 10y ago
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Why ion implantation is necessary?
Ion implantation is necessary in semiconductor manufacturing to precisely introduce dopant atoms into the crystal lattice of a semiconductor material, which helps modify its electrical properties. This process allows for precise control of the dopant concentration and profile, enabling the creation of specific device characteristics such as the conductivity type and doping level. Ion implantation is also used for creating shallow junctions in transistors and optimizing device performance.
What is the difference between phosphorus doped and gallium doped semiconductors?
phosphorus doped semiconductor will be N type.gallium doped semiconductor will be P type.There are also other differences due to the different size of the dopant atoms.
What are common uses of hydrogen phosphide?
Hydrogen phosphide, also known as phosphine, is commonly used as a fumigant to control pests in stored grain and fumigation of structures. It is also used in semiconductor manufacturing, as a reducing agent in chemical reactions, and in the synthesis of organic compounds. Additionally, it has applications in the production of flame retardants, in metallurgy, and as a dopant in the electronics industry.
Is boron conductor?
Group 14 elements such as silicon or germanium generally act as semi-conductors. Boron, a group 13 element, normally acts as a dopant in semiconductors.
What are arsenic doped wafers used for?
Arsenic-doped wafers are used in the semiconductor industry to create n-type semiconductor materials. These materials are essential for manufacturing transistors, diodes, and integrated circuits. The arsenic atoms introduce extra electrons into the silicon crystal lattice, enabling the controlled flow of electric current within the semiconductor device.
What is a compensated semiconductor?
compensated semiconductor...SEMICONDUCTORS WHICH CONTAIN BOTH DONOR AND ACCEPTOR DOPANT ATOMS IN SAME REGION IS CALLED COMPENSATED SEMICONDUCTOR.
What atom is used as dopant in an n-type semiconductor?
Phosphorus. (And Boron for p-type)
Can an PNP transistor be converted to NPN?
No. The NPN transistor is a semiconductor crystal that was "doped" with n-type dopant, then p-type dopant, and then n-type dopant during manufacture. Just the opposite is true for the PNP transistor. Once it's made, it can't be "unmade" to change it.
Is arsenic a semiconductor?
Arsenic is not a semiconductor by itself, but it is commonly used as a dopant in semiconductor materials like silicon to alter their electrical properties. Arsenic increases the number of available charge carriers in the material, which can make it conduct electricity more effectively.
IS indium a p type semiconductor?
No, indium is not a p-type semiconductor on its own. Indium is typically used as a dopant in semiconductors to tune their electrical properties, such as increasing the conductivity or modifying the bandgap.
What is the difference between phosphorus doped and gallium doped semiconductors?
phosphorus doped semiconductor will be N type.gallium doped semiconductor will be P type.There are also other differences due to the different size of the dopant atoms.
Silicon electrical conductivity?
Varies dramatically with dopant concentration. Pure silicon is almost an insulator.
Is gallium used in computers?
Yes. Gallium is used as a "dopant", a calculated impurity that turns the silicon that makes up the computer chip from a nonconductor to a semiconductor.
How do you construct an n type semiconductor?
An n-type semiconductor is formed by doping a pure semiconductor (silicon or germanium, for example) with atoms of a Group V element, typically phosphorus or arsenic. The dopant may be introduced when the crystal is formed or later, by diffusion or ion implantation.
When a pure semiconductor is dopped with fifth group impurity the fermi leves shifts where?
That depends on the semiconductor and the site the dopant occupies. If the bonding of the dopant requires more electrons than it came with, it accepts those extra electrons from the Fermi level, thereby lowering it. If the dopant has too many electrons to satiate its bonds, then it donates those electrons to the Fermi level, thereby raising it. Just to note: Adding a Group V dopant to a Group IV semiconductor does not mean that it will substitute a native atom. The dopant may take up an interstitial location, where it might seek a valence of 4 (sp3), 6 (filled p-shell), or 8 (filled s&p shells). In the first case it is a single donor, in the next a single acceptor, and in the last a triple acceptor. It might also remain uncharged. In a II-VI semiconductor, a Group V atom could substitute on an anion (chalcogen) or cation (metal) site. If on the anion site, it would have too few electrons (5 < 6) and become an acceptor. If on the cation site, it would have too many electrons (5 > 2) and likely become a donor. The dopant might also occupy an interstitial site.
What is an intrinsic semiconductor and what is an extrinsic semiconductor?
intrinsic semiconductor is an un-doped semiconductor, in which there is no impurities added where as extrinsic semiconductor is a doped semiconductor, which has impurities in it. Doping is a process, involving adding dopant atoms to the intrinsic semiconductor, there by gives different electrical characteristics
What is the composition of chromium oxide and aluminium oxide in ruby?
Ruby is aluminium oxide; chromium is only a natural dopant, in traces. The concentration of chromium is not constant in rubies.
