The contact potential of a pn-junction diode is signified by the turn-on or barrier voltage, which is the voltage beyond which non-negligible current con be measured flowing in the forward-bias direction. To put it simply, one can run a variable potential difference across a diode in it forward-bias direction until one measures a current. That is the contact potential of the diode. Theoretically, the contact potential is a function of the temperature and doping concentration, and intrinsic hole-electron pair concentrations. However, in the real world, there maybe other factors that will affect the contact potential of a diode.
If the potential across the junction is high enough, then it could cause it to conduct. This is with all diodes and is the forward voltage. If it is not high enough, it will just sit there and not conduct.
Zener diodes differ from normal p-n junction diodes in that they have a reduced reverse breakdown voltage and, in fact, we normally operate zener diodes in reverse bias to take advantage of the relatively stable voltage regulation it provides.
Germanium point contact diodes were first created and used during World War 2 as detectors in microwave RADAR systems, as the vacuum tubes available at that time did not operate at microwave frequencies. Shortly after World War 2 germanium junction diodes were created.
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
point contact has the least junction capacitance
metal-semiconductor junction diodes
If the potential across the junction is high enough, then it could cause it to conduct. This is with all diodes and is the forward voltage. If it is not high enough, it will just sit there and not conduct.
semiconductor diode with out a pn junction.
Schottky Diode
n-p-n and p-n-p junction diodes
Zener diodes and ordinary junction diodes are similar, except that zener diodes have additional doping to bring their reverse breakdown voltage into a more usable value, and to allow them to not destructively avalanche when they do conduct in the reverse direction.
Zener diodes differ from normal p-n junction diodes in that they have a reduced reverse breakdown voltage and, in fact, we normally operate zener diodes in reverse bias to take advantage of the relatively stable voltage regulation it provides.
When two dissimilar metals come into contact as in the case of copper and ferrous due to diffusion electrons get migrated right from one to the other and so a potential of the order of few volts is created. This is called junction potential. This plays an important role in giving thermo emf for a thermo couple
Junction Field Effect Transistors (JFET) have a single junction between the gate and channel, like a diode but they do not operate like diodes! The junction in a JFET must always be kept reverse biased for it to operate, the junction in a diode is usually expected to be forward biased sometimes and reverse biased at other times while operating.Metal Oxide Semiconductor Field Effect Transistors (MOSFET) have no junction between the gate and channel! Instead they have a silicon dioxide insulator layer. Diodes do not have an insulator layer.The feature that makes FETs operate entirely different from diodes is the channel between the source and drain contactson the semiconductor. By varying the potential on the gate of a FET relative to the potential on the channel the channel can be made to "pinch off" or "open up" thus varying its resistance. This can be used to create amplification in the circuit, which cannot be done using a diode.MOSFETs usually are built on a substrate and use a junction that is always reverse biased to prevent the substrate from short circuiting the channel.Note: most integrated circuits use this same reverse biased substrate junction structure to insulate the components of the circuit on the chip from the substrate semiconductor material to prevent it from short circuiting those components. These junctions are parasitic diodes not shown on the schematic of the integrated circuit, as they have no function except as insulation between components.
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
Germanium point contact diodes were first created and used during World War 2 as detectors in microwave RADAR systems, as the vacuum tubes available at that time did not operate at microwave frequencies. Shortly after World War 2 germanium junction diodes were created.
The built in potential in a pn junction. Due to the difference in carrier concentration between the sides of a pn junction. Diffusion potential increases with increase in doping levels.