Yes, it varies inversely, i.e. as temperature increases the barrier potential decreases. It decreases by 2mV for degree Celsius rise of temperature.
barrier potential P0=(kT/q)*ln(Na*Nd/Ni^2) when T ↑, P0↑.
potential energy
The magnitude of the electric potential is dependent upon the particle's charge and the electric field strength.
0.3v as opposed to the silicon 0.6v
That is called gravitational potential energy.
barrier potential P0=(kT/q)*ln(Na*Nd/Ni^2) when T ↑, P0↑.
barrier potential P0=(kT/q)*ln(Na*Nd/Ni^2) when T ↑, P0↑.
The barrier potential may depend on the exact material; but you can't normally change that. It may also depend on temperature.Also, such a barrier potential is not fixed at some value (like 0.7 V); however, it's often close enough that you can consider it to be constant. But actually, the barrier potential depends on the current. At higher currents, the potential is slightly higher.
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V
its temperature dependent
The potential barrier of a diode is caused by the movement of electrons to create holes. The electrons and holes create a potential barrier, but as this voltage will not supply current, it cannot be used as a voltage source.
Potential barrier of silicon is 0.7, whereas potential barrier of germanium is 0.3
0.3 volt
The magnitude of the electric potential is dependent upon the particle's charge and the electric field strength.
Forward bias is when the height of the depletion layer is reduced such that a greater number of majority charge carriers have sufficient energy to overcome the potential barrier while revers bias is when the height of the potential barrier is increased so that very few majority charge carriers have sufficient energy to surmount the potential barrier. All the above phenomena takes place when a potential barrier is applied across the pn junction.
volume or temperature