Yes, when designing distributed amplifier, the bandwidth (cut-off frequency) is inversely proportional to Cin(Fc=1/(pi*R*Cin)). Lower Cin means higher bandwidth.
FET has very high input impedanceBJT has very low input impedance
Due to its *low noise *high input impedence and low output impedence FET is used in numerous applications. *Buffer ampliier *Phase shift oscillator *Integrator *Amplifier
FET s have very high input impedance when compared with Bipolar transistors.
FET is an excellent buffer amplifier because it has an high input impedance by which when we are connecting two networks for transferring out put of one stage to another stage all the power is drown on the second network not on first network.if first stage network has an low input impedance then first circuit drown all power from second circuit.
An inverter has a high output when the input is low, and a low output when the input is high.
The input gate current of a Field-Effect Transistor (FET) is ideally zero because FETs are voltage-controlled devices with very high input impedance. In practice, the gate current may be in the range of picoamperes (pA) to nanoamperes (nA) due to leakage currents and other non-ideal behaviors. This exceedingly low current helps maintain the efficiency and performance of FETs in various applications.
It can take a lot of capacitance to present a low impedance to a low frequency. Electrolytics offer lots of capacitance for a low price.
A FET (Field-Effect Transistor) has high input impedance because it operates by controlling the current flow through an electric field rather than relying on a direct current path, which minimizes the input current. This is due to the gate being insulated from the channel by a thin layer of oxide, resulting in minimal charge flow into the gate. Conversely, FETs have low output impedance because they can drive loads effectively without significant voltage drop across the transistor, allowing for efficient power transfer. This combination makes FETs ideal for applications requiring high sensitivity and low power loss.
A Field Effect Transistor (FET) operates as a source follower due to its configuration where the output is taken from the source terminal. In this setup, the input signal is applied to the gate, and the output voltage at the source closely follows the gate voltage, minus a small threshold voltage drop. This characteristic allows the source follower to provide a high input impedance and low output impedance, making it an effective buffer for signal amplification without significant gain.
Input Low Current, IIL, is the current that must be sinked (pulled from) an input in order to guarantee that the input is seen as low.
FET's (field effect transistors) are unipolar devices because unlike BJT's that use both electron and hole current, they operate only with one type of charge carrier. BJT is a current-controlled device; that is the base current controls the amount of collector current. FET is a voltage-controlled device, where voltave between two of the terminals (gate and source) controls the current through the device. BJT's have a low input impedance ( ~1k -3k ohms), while FET's have a very high input impedance (~10^11 ohms). Consequently FET's have a lower power consumption. BJT's produce more noise than FET's . FET's have a slower switching speed . BJT's are subject to thermal runway while FET's are immune to this problem. BJT's have a higher cutoff frequencey and a higher maximum current then FET's. FET's are easy to fabricate in large scale and have higher element density the BJT's.
A: Is the same as low frequency except it becomes a predominant factor.