The O-zone!
BJT is nothing but the addition of two PN junction diodes. There are two types of BJT= P-N-P or N-P-N P-N N-P + or + N-P = P-N-P P-N =N-P-N SCR is a thyristor which is made adding two BJTs. Of course they are made of sillicon. Exempli gratia: P-N-P + + N-P-N = P-N-P-N comparison between scr bjt and mosfet Check the related link for further information.
Here is a link that will answer your questionhttp://www.automationdirect.com/static/specs/proxterms.pdf
Let's set this equation up. Call the original number No and the number you have N and the percentage increase P. The equation to get the number you have ( N ) is No + No x P = N and we want to solve for No so No ( 1 + P ) = N No = N / ( 1 + P )
The p-n junction was discovered by Russell Ohl. A p-n junction is boundary between two types of semi-conductor material. One can find more information on a p-n junction on Wikipedia.
add between n and p
If you have an experiment in which the probability of success at each trial is p, then the probability that the first success occurs on the nth trial is Pr(N = n) = [(1 - p)^(n-1)]*p for n = 1, 2, 3, ...
The proof relies on a result from number theory known as the Bertrand's postulate, which states that for any integer ( n > 1 ), there exists at least one prime ( p ) such that ( n < p < 2n ). Since ( n! ) (n factorial) grows much faster than ( 2n ) for ( n > 2 ), we can conclude that there are primes not only between ( n ) and ( 2n ) but also between ( n ) and ( n! ). Thus, for any integer ( n > 2 ), there exists a prime ( p ) such that ( n < p < n! ).
Call F the final amount and P the principal. Then F = P(1+i)n F/(1+i)n = P
P= positive N=negative P x N = N N x P = N P x P = P N x N = P Hope that helps!?!?!
P=F/A Pressure=Force over area To get this you use P= N/M2
N - p% = N - p% of N = N*(1 - p%) = N*(1 - p/100) or N*(100 - p)/100
n p =n!/(n-r)! r and n c =n!/r!(n-r)! r