The O-zone!
BJT is nothing but the addition of two PN junction diodes. There are two types of BJT= P-N-P or N-P-N P-N N-P + or + N-P = P-N-P P-N =N-P-N SCR is a thyristor which is made adding two BJTs. Of course they are made of sillicon. Exempli gratia: P-N-P + + N-P-N = P-N-P-N comparison between scr bjt and mosfet Check the related link for further information.
Here is a link that will answer your questionhttp://www.automationdirect.com/static/specs/proxterms.pdf
Let's set this equation up. Call the original number No and the number you have N and the percentage increase P. The equation to get the number you have ( N ) is No + No x P = N and we want to solve for No so No ( 1 + P ) = N No = N / ( 1 + P )
add between n and p
The p-n junction was discovered by Russell Ohl. A p-n junction is boundary between two types of semi-conductor material. One can find more information on a p-n junction on Wikipedia.
If you have an experiment in which the probability of success at each trial is p, then the probability that the first success occurs on the nth trial is Pr(N = n) = [(1 - p)^(n-1)]*p for n = 1, 2, 3, ...
The proof relies on a result from number theory known as the Bertrand's postulate, which states that for any integer ( n > 1 ), there exists at least one prime ( p ) such that ( n < p < 2n ). Since ( n! ) (n factorial) grows much faster than ( 2n ) for ( n > 2 ), we can conclude that there are primes not only between ( n ) and ( 2n ) but also between ( n ) and ( n! ). Thus, for any integer ( n > 2 ), there exists a prime ( p ) such that ( n < p < n! ).
Call F the final amount and P the principal. Then F = P(1+i)n F/(1+i)n = P
P= positive N=negative P x N = N N x P = N P x P = P N x N = P Hope that helps!?!?!
P=F/A Pressure=Force over area To get this you use P= N/M2
N - p% = N - p% of N = N*(1 - p%) = N*(1 - p/100) or N*(100 - p)/100
n p =n!/(n-r)! r and n c =n!/r!(n-r)! r