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Is it is possible to grow HEMT device by Dry etching?
Search Google for this. There is lots of info online.
What is the meaning of electrical components?
Electronic component are those component which are used to make the electronic circuit it may be active or passive . some active components are - Diode ,FET,BJT,MOSFET, and HEMT etc. while passive component are those device which can not process/amplify signal like- resistor capacitor inductor etc.
How high electron mobility transistor differs from bipolar junction transistor?
HEMT differs from BJT in following ways: 1. Unipolar device 2. Voltage Controlled device 3. Current is Controlled by Electric Field (FET) 4. 2 DEG is formed 5. High Mobility due to 2 DEG (Faster) etc 6. Source, Gate and Drain names for Emitter, Base, Collector etc M.A. Khan
Anna university syllabus for microwave in ece 7th sem?
UNIT - 1Microwave Frequencies, Microwave Devices, Microwave Systems, Microwave Units of Measure, Microwave Hybrid Circuits, Waveguide Tees, Magic Tees (Hybrid Trees), Hybrid Rings (Rat-Race Circuits), Waveguide Corners, Bends and Twists, Directional Couplers, Two-Hole Directional Couplers, Z & ABCD Parameters- Introduction to S parameters, S Matrix of a Directional Coupler, Hybrid Couplers, Circulators and Isolators, Microwave Circulators, Microwave Isolators.Transit time limitations in transistors, Microwave bipolar transistors, power frequency limitations microwave field effect transistors, HEMT, Gunn effect - RWH theory, high - field domain and modes of operation microwave amplification - Avalance transit time devices - IMPATT and TRAPATT diodes and comparison parametric amplifiers.UNIT - 2 : TRANSFERRED ELECTRON DEVICES (TEDs) and AVALANCHE TRANSIT-TIME DEVICESIntroduction, Gunn-Effect Diodes - GaAs Diode, Background, Gunn Effect, Ridely-Watkins-Hilsun (RWH) Theory, Differential Negative Resistance, Two-Valley Model Theory, High-Field Domain, Modes of Operation, LSA Diodes, InP Diodes, CdTe Diodes, Microwave Generation and Amplification, Microwave Generation, Microwave Amplification, AVALANCHE TRANSIT-TIME DEVICES, Introduction, Read Diode, Physical Description, Avalanche Multiplication, Carrier Current Io(t) and External Current I¬e¬(t), Output Power and Quality Factor, IMPATT Diodes, Physical Structures, Negative Resistance, Power Output and Efficiency, TRAPATT Diodes, Physical Structures, Principles of Operation, Power Output and Efficiency, BARITT Diodes, Physical Description, Principles of Operation, Microwave Performance, Parametric Devices, Physical Structures, Nonlinear Reactance and Manley - Rowe Power Relations, Parametric Amplifiers, Applications.UNIT - 3 : MICROWAVE LINEAR-BEAM TUBES (O TYPE) and MICROWAVE CROSSED-FIELD TUBES (M TYPE)Klystrons, Reentrant Cavities, Velocity-Modulation Process, Bunching Process, Output Power and Beam Loading, State of the Art, Multicavity Klystron Amplifiers, Beam-Current Density, Output Current Output Power of Two-Cavity Klystron, Output Power of Four-Cavity Klystron, Reflex Klystrons, Velocity Modulation, Power Output and Efficiency, Electronic Admittance, Helix Traveling-Wave Tubes (TWTs), Slow-Wave structures, Amplification Process, Convection Current, Axial Electric Field, Wave Modes, Gain Consideration, MICROWAVE CROSSED-FIELD TUBES , Magnetron Oscillators, Cylindrical Magnetron, Coaxial Magnetron, Tunable Magnetron, Ricke diagram.UNIT - 4 : STRIP LINES and MONOLITHIC MICROWAVE INTEGRATED CIRCUITSIntroduction, Microstrip Lines, Characteristic Impedance of Microstrip Lines, Losses in Microstrip Lines, Quality Factor Q of Microstrip Lines, Parallel Strip Lines, Distributed Lines, Characteristic Impedance, Attenuation Losses, Coplanar Strip Lines, Shielded Strip Lines, References, Problems, MONOLITHIC MICROWAVE INTEGRATED CIRCUITS, Introduction, Materials, Substrate Materials, Conductor Materials, Dielectric Materials, Resistive Materials, Monolithic Microwave Integrated-Circuit Growth, MMIC Fabrication Techniques, Fabrication Example.UNIT - 5 : MICROWAVE MEASUREMENTSSlotted line VSWR measurement, VSWR through return loss measurements, power measurement, impedance measurement insertion loss and attenuation measurements- measurement of scattering parameters - Measurement of 1 dB, dielectric constant measurement of a solid using waveguide
