0
a break down diode is a diode that allows current to flow freely in one direction but not in the other the difference between it and a standard diode is that it is a semiconductor in the direction that current doesn't flow freely in
current only flows in this side when the voltage reaches a set point and the resistance then breaks-down and allows the current to flow it is useful where the circuit might require low voltage protection
What else can I help you with?
How will you differentiate the diodes whether it is zener or an avalanche when you are given two diodes of rating 6.2V and 24V?
Silicon "zener diodes" with a zener voltage rating of 5.6V or higher operate mainly by avalanche breakdown, so both the 6.2V and 24V "zener diodes" are avalanche breakdown type (not zener breakdown type).
In what region of their characteristic curve are zener diodes operated?
Zener diodes are normally operated in their reverse breakdown voltage curve.
What is the value of the knee voltage and breakdown voltage of z?
It is about 0.7 volt for Silicon diodes.
Why current flow from cathode to anode in zener diode?
First off, I don't know if by current flow you mean conventional current flow or electron current flow. You realize they are in opposite directions and most electronics engineers use conventional current flow in circuit analysis.Ignoring this, I will assume your real question is "Why does current flow backwards in zener diodes compared to ordinary diodes?" The answer is that zener diodes are not operated in the forward biased range as are ordinary diodes, instead they are operated in the reverse biased range. When reverse biased enough any diode reaches breakdown voltage and suddenly conducts. Most ordinary diodes can be destroyed by breakdown, but zener diodes are designed to tolerate it. In zener diodes, this breakdown is referred to as "zener breakdown" and the voltage it happens at the "zener voltage".Low voltage zener diodes can still be used in the forward biased mode, like ordinary diodes. However most high voltage zener diodes have a "blocking diode" that is not documented on the data sheet to block forward biased operation. "Blocking diodes" are simply ordinary diodes wired in series with the zener; when the zener would be forward biased they are reverse biased (and thus blocking current), when the zener would be reverse biased they are forward biased.
Characteristics of diodes?
forward drop, reverse breakdown voltage, power rating. hope that's what you wanted.
What are the features of Zener diode?
By varying doping levels ,it is possible to produce zener diodes with varying breakdown voltages.
Difference between zener diode and junction diode?
Zener diodes and ordinary junction diodes are similar, except that zener diodes have additional doping to bring their reverse breakdown voltage into a more usable value, and to allow them to not destructively avalanche when they do conduct in the reverse direction.
How zener diode differ from normal p-n junction diode?
Zener diodes differ from normal p-n junction diodes in that they have a reduced reverse breakdown voltage and, in fact, we normally operate zener diodes in reverse bias to take advantage of the relatively stable voltage regulation it provides.
Can DIAC be replaced by two anti-parallel diodes?
i think not.diodes have a low breakdown voltage, around 1v. a diac has bv of about 30v.
Difference between diode and zener diode?
All diodes have a tiny voltage when current flows in a 'forward' direction. And a Reverse Breakdown voltage when current tries to flow in a reverse direction resulting in a high voltage. That current does not flow until voltage exceeds its breakdown number. Regular diodes have a reverse breakdown voltage that is somewhere above a number, For example a 1N4002 has a Reverse Breakdown Voltage somewhere above 100 volts. A Zener diode is constructed so that its Reverse Breakdown voltage is clearly defined and accurate. For example Reverse Breakdown voltage for a 1N4733 is 5.1 volts. A !N4734 is 5.6 volts.
How can avalanche breakdown be avoided in FET?
Breakdown depends on the electric field value in FETS (as in diodes and such, where you can find a junction). Theoretically, you need to - dope less the junction region of your device (like p-i-n diodes, the i (intrinsic) region is not doped in order to reduce E field peak, which occurs near the center of the device). - raise the length of your device Both of these two solutions will have the drawback of increasing your ON resistance. At circuit design level, you can protect your devices with clamp diodes or something similar.
Why zener diode used as voltage regulator?
It has a very sharp reverse breakdown voltage curve and is not damaged by the reverse current, as some normal diodes might be.
