in a un-doped semiconductor charge carrier can move in any direction under applied potential difference. but when it is doped with p and n type then a junction gets form around which due to concentration gradient depletion region gets formed. now, this pn juncton will conduct current only when forward bias and stops (still leakage current is there) when reverse bias. thus it acts as a rectifier now
I cannot think of any, but a pn junction is a part of a diode and has a rectifying properties.
The resistance of a forward biased pn junction is zero.
There are 2 type of biasing in PN junction didoe Forward biasing Reverse biasing
As temperature rises more minority carriers are created, causing leakage across the junction to rise. This can cause runaway and eventual destruction of the junction.
another name for diode is "pn" junction.
A pn junction can be formed by bringing the p and n type materials together.
I cannot think of any, but a pn junction is a part of a diode and has a rectifying properties.
the material in which using for doping is already neutral.,,so the pn-junction diode also neutral........
The resistance of a forward biased pn junction is zero.
There are 2 type of biasing in PN junction didoe Forward biasing Reverse biasing
we cannot make thyristor using two diodes. because the PN junction cannot be made when we connect with wires or solder it. that junction is only formed when we diffuse n material into a P material and vice versa.
no....is n't
One
When the pn junction is forward biased, some of the space charge is neutralized reducing the width of the pn junction.
limts of operating a p-n junction
The built in potential in a pn junction. Due to the difference in carrier concentration between the sides of a pn junction. Diffusion potential increases with increase in doping levels.
As temperature rises more minority carriers are created, causing leakage across the junction to rise. This can cause runaway and eventual destruction of the junction.