A: The principle is that is a semiconductor meaning will conduct one way only. A switching diode however will have the least of capacitance across its junction so when it disconnect is faster
A photodiode is a type of photodetector capable of converting light into either current or voltage, depending upon the mode of operation. Its characteristics is same as that of an ordinary diode, except that it depends on light.
Backward diode
The schottky diode is based on a metal-semiconductor junction, called a schottky barrier, that results in lower forward voltage and vastly decreased switching time. While an ordinary silicon diode has a forward voltage around 0.7 volts, with a germanium diode around 0.3 volts, the schottky can be as low as 0.15 volts. The switching time can be in the tens of picoseconds range, compared to hundreds of nanoseconds. The downside is limited reverse voltage rating and poor reverse voltage leakage, which increases with temperature, causing potential thermal runaway.
Absolutely not. An ideal diode's characteristic would be perfect conduction in the forward direction and perfect insulation (no conduction) in the reverse direction. Silicon diodes come respectably close.
A: A zener is a diode that when connected in the reverse mode current direction it will breakdown to a predetermined voltage any further increasing voltage the breakdown will remain practically the same.
by using a suitable diagram, explain the one of the operation in microwave energy sources except Guinn Diode.
Diode is a two terminal semicon. Diode is a Switching device
A photodiode is a type of photodetector capable of converting light into either current or voltage, depending upon the mode of operation. Its characteristics is same as that of an ordinary diode, except that it depends on light.
The schottkey diode.
switch is similar to diode action
Backward diode
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wat's d application of trappat diode
The schottky diode is based on a metal-semiconductor junction, called a schottky barrier, that results in lower forward voltage and vastly decreased switching time. While an ordinary silicon diode has a forward voltage around 0.7 volts, with a germanium diode around 0.3 volts, the schottky can be as low as 0.15 volts. The switching time can be in the tens of picoseconds range, compared to hundreds of nanoseconds. The downside is limited reverse voltage rating and poor reverse voltage leakage, which increases with temperature, causing potential thermal runaway.
what is the basic operation of LED
It conducts in only one direction.
A diode characteristic curve is a curve that describes the characteristic of diode and it is normally based on experiment data. The curve itself has two distinctly separate parts.One part lies in the first quadrant and it stands for the forward-biased situtation.It reflets the barrier voltage(meaning the smallest amount of voltage that can turn on the diode).For Germannium diode,the barrier voltage is 0.3V while silicon diode is 0.7V,but the real value differs according to the temperature and current flows through the diode.The other part lies in the third quadrant which indicates the reverse-biased situation,from which you can find out the leakage current(the current flow through before Breakdown Point). Typcially, a diode characteristic curve varies from diode to diode.But theoretically speaking,we regard them as the same.