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An ordinary junction transistor consists of two junctions. In effect a variation of the base to emitter current influences the reverse leakage current at the base to collector junction. The base being common to both junctions.
A Field Effect Transistor uses an electric field to narrow the conductive channel thus varying its resistance. A FET has an extremely high input resistance compared with that of a standard junction transistor.
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What FET stand for?
FET stands for field-effect transistor.
Why the name is FET?
FET stands for Field Effect Transistor. The name FET comes because the gate current of a field effect transistor is zero and current present in the source conductor is due to an electric field produced by the substrate material placed between the gate and the source.
When FET is invented and who invented it?
Field Effect Transistor (FET) was invented in 1926 by Julius E. Lilienfeld.
What is the maximum gate length in a FET transistor?
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What types of transistors are the following - BJT PCT UJT SBT FET GJT AJT DFT?
The BJT is the bipolar junction transistor, the PCT is the point contact transistor, the UJT is the uni-junction transistor, the SBT is the surface barrier transistor, the FET is the field effect transistor, the GJT is the grown-junction transistor, the AJT is the alloy-junction transistor, and the DFT is the drift field-junction transistor.
What the difference between Transistor and resistor?
The difference between a Transistor and a Resistor is that a transistor is designed to amplify the electrical current, whereas a Resistor is designed to reduce the electrical current.
What does the acronym FET stand for?
FET is an acronym that is used in a variety of situations including education, medical, business and electronics. The abbreviation FET stands for Field-effect Transistor.
What is CMOS FET transistor?
CMOS stands for 'Complementary Metal Oxide Silicon' and is the construction method of the device. FET stands for 'Field Effect Transistor'. Although it is a transistor and is used in a similar fashion, it is totally different in the way it is controlled and biased. The pin outs are named differently. A bipolar transistor has a Base Emitter and Collector. A FET has a Drain Source and Grid. Current is controlled between the 'Source' and 'Drain' by altering the voltage on the grid. It works in a similar way to the old vacuum tube valves and is why the control is called a grid. It forms a 'pinch off' effect, in the path between the source and drain, instead of the depletion layer in a normal transistor.
Why do you bias a field effect transistor?
we do bias field effect transistor because FET works if its Q point lies into active reason .If we bias FET ,the Q point lies in active reason
What is FET?
FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only and no current is drawn. It is a high input impedence device and is used in computers, telecommunication and control circuits. This transistor is better in certain parameters as compared to BJT, that is Bipolar Junction Transistor.
What is meaning of bfw11 in fet?
B=sillicon f=fet w=used in high frequency application 11=gain of transistor
Why Pmos transistor is usually larger than Nmos transistor in layout?
Due to differences in carrier mobility between P and N type semiconductor, for similarly doped channels the channel of a PMOS FET will be a bit wider than the channel of an NMOS FET so that they both have identical channel resistance. To make the channel wider the PMOS FET will take a larger chip area.
