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What is the formula to calculate hole density in N-Type semiconductor when electron density and intrinsic carrier concentration is givenn?
Wiki User
∙ 13y ago
p = ni^2/n
Wiki User
∙ 13y ago
The formula to calculate hole density in an N-Type semiconductor is (p = \frac{{n_i^2}}{{n}}), where (p) is the hole density, (n_i) is the intrinsic carrier concentration, and (n) is the electron density. This formula is derived from the law of mass action and represents the equilibrium condition where the product of electron and hole concentrations equals the square of the intrinsic carrier concentration in a semiconductor material.
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Electron mobility of intrinsic Si semi conductor?
The electron mobility of intrinsic silicon semiconductor is typically around 1500 cm^2/Vs at room temperature. This value represents the ability of electrons to move through the material in response to an electric field, with higher mobility indicating faster electron movement. It is an important parameter in determining the performance of silicon-based devices such as transistors.
What element would be an electron poor semiconductor when added to silicon As Be B Al or none?
Boron (B) would be an electron poor semiconductor when added to silicon because it has one less electron than silicon, leading to an electron deficiency in the crystal lattice.
What is the potential barrier of germanium?
The potential barrier of germanium is typically around 0.3 to 0.7 electron volts (eV) when used as a semiconductor in electronic devices. This barrier helps control the flow of current in the material and is crucial for its behavior as a semiconductor.
When added as impurity into the silicon produces n -type semiconductor?
Phosphorus, when added as an impurity into silicon, will produce an n-type semiconductor. This is because phosphorus has five valence electrons compared to silicon's four, resulting in an extra electron that can contribute to the conductivity of the material.
What is the fourth quantum number of the 3p1 electron in aluminum?
ms = +1/2
What is meant by intrinsic semiconductor?
Semiconductor in pure form (i.e. without doping) is called intrinsic or i-type semiconductor. The no of charge carrier in this case is determined by the materials itself only and not by the impurities. In an intrinsic semiconductor number of excited free electron is equal to the number of holes.
What is an intrinsic semiconductor and what is an extrinsic semiconductor?
intrinsic semiconductor is an un-doped semiconductor, in which there is no impurities added where as extrinsic semiconductor is a doped semiconductor, which has impurities in it. Doping is a process, involving adding dopant atoms to the intrinsic semiconductor, there by gives different electrical characteristics
What is the effect of temperature on an intrinsic semiconductor?
An intrinsic semiconductor is basically a pure semiconductor, though some might argue that a small amount of doping can still yield an intrinsic semiconductor. In the crystal structure of this material, there are very few electrons crossing the band gap into the conduction band, and this stuff doesn't want to conduct much current. But as temperature increases, more electron-hole pairs will appear as electrons jump that band gap and take up places in the conduction band. And if you guessed that increasing temperature will permit the intrinsic semiconductor to conduct current flow a bit better, you'd be right. The intrinsic semiconductor has a positive temperature coefficient. More heat, more conduction under the same conditions.
Write a note on intrinsic and extrinsic semiconductor?
Intrinsic semiconductor means pure form of semiconductor in this no addtition of impurity.but ext is not pure semicnductor,in this add the impurity which is p-type or n-type .Due to dopping,(adding impurity)excess electorn or photon created in crystal of atom creation of electron or photon depend on dopping material
How do you calculate donor concentration in asemiconductor?
if the donor consecration ( nd )is much larger than the intrinsic concentration( ni )then n0=nd when n0 is the thermal equilibrium concentration of free electron so : nopo=ni2 (when p0 is the thermal equilibrium concentration of holes ) po=ni2/nd do some basic math we got nd=ni2/po
What is a degenerate simeconductor Draw an energy band diagram for a degenerate semiconductor?
A degenerate semiconductor is one where the Fermi level lies within the conduction band due to very high doping levels. This results in a high electron concentration, making the material highly conductive. In the energy band diagram for a degenerate semiconductor, the Fermi level rises above the intrinsic energy level into the conduction band, indicating an abundance of electrons.
Electron mobility of intrinsic Si semi conductor?
The electron mobility of intrinsic silicon semiconductor is typically around 1500 cm^2/Vs at room temperature. This value represents the ability of electrons to move through the material in response to an electric field, with higher mobility indicating faster electron movement. It is an important parameter in determining the performance of silicon-based devices such as transistors.
What is the term for a semiconductor that is missing electronic?
p-type semiconductor A semiconductor that is missing electrons is called an electron hole.
What is the the term for a semiconductor that is missing electrons?
p-type semiconductor A semiconductor that is missing electrons is called an electron hole.
What is the term for a semiconductor that is missing electrons?
p-type semiconductor A semiconductor that is missing electrons is called an electron hole.
When an electron is displaced in a semiconductor the hole that left behind is?
A lack of electron
What roles do free electrons and holes play in intrinsic semiconductor?
Free electrons and holes are the charge carriers-not only in intrinsic semiconductors(these are the purest form of semiconductors-typically as pure as can be made available with the present technology) but also in extrinsic semiconductors(doped semiconductors).In intrinsic semiconductors,electron-hole pairs are created due to the natural processes like-absorption of heat energy from the surroundingsabsorption of energy from photons.this absorbed energy results in breakdown ofcovalant bonds in intrinsic semiconductors as a result of which electron-hole pairs are created.It is this electron hole pair which is responsible for carrying the current through the intrinsic semiconductor when a potential difference is applied across it.In extrinsic semiconductor the case is slightly different-here, we have-majority charge carriers and minority charge carriers.in an n-type semiconductor-majority charge carriers are the electrons contributed by the pentavalent impurities while the minority charge carriers are the holes which are generated as electron-hole pairs due to natural processes discussed above.in p-type semiconductor-majority charge carriers are the holes contributed by trivalent impuritieswhereas the minority charge carriers are the electronswhich are generated as electron-hole pairs due to natural processes discussed above.these are the majority charge carriers which contribute heavily in the flow of current through the extrinsic semiconductors than the minority charge carriers.I suggest you to please go through mass action law and law of electrical neutrality of semiconductors for better understanding.
