The barrier voltage of a diode is 0.7v for silicon and 0.3 for germanium. after this voltage is reached the current starts increasing rapidly... till this voltage is reached the current increases in very small steps...
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
ginago
No, we don not consider the barrier voltage of a diode to be able to act as a voltage source. The barrier voltage arises during construction of the p-n junction, and it results from charge separation. Separating charges results in voltage, but this difference of potential cannot be tapped as a voltage source because it cannot supply current the way we understand conventional voltage sources are able do.
(A) The bias battery voltage (B) 0V (C) the diode barrier potentiaol (D) The total circuit voltage
The amount of (forward biased) voltage across a diode is dependent on current and temperature. A typical silicon diode has a forward voltage of about 0.6V at low current and temperature. As current goes up, voltage goes up slightly, with a typical voltage being 1.4V at high current. As temperature goes up, voltage goes down slightly, but the maximum current rating also goes down.
The potential barrier of a diode is caused by the movement of electrons to create holes. The electrons and holes create a potential barrier, but as this voltage will not supply current, it cannot be used as a voltage source.
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
ginago
No, we don not consider the barrier voltage of a diode to be able to act as a voltage source. The barrier voltage arises during construction of the p-n junction, and it results from charge separation. Separating charges results in voltage, but this difference of potential cannot be tapped as a voltage source because it cannot supply current the way we understand conventional voltage sources are able do.
(A) The bias battery voltage (B) 0V (C) the diode barrier potentiaol (D) The total circuit voltage
zener cut in voltage
There is no exact substitute for a germanium diode, except another germanium diode. However if the only concern is to get a lower forward voltage drop than that of a silicon diode (0.7V), then a schottky barrier diode may be a suitable replacement as its forward voltage drop (<0.1V) is even lower than that of a germanium diode (0.2V).
Forward biase the given diode by using a Variable resistor in the circuit. By adjusting the value of variable resistor you will adjust the voltage being applied to junction diode. First adjust the resistance such that no(negligble) current flows through the circuit. Now start decreasing the value of resistance. Note the voltage across resistor(Vr) when current just starts flowing through the circuit. Then Potential barrier of diode will be: Vb=V-Vr Vb:Barrier Potential V:Battery Voltage Vr:Voltage Drop across resistance when current just starts flowing through the circuit.
Negitive cathode, positive anode, voltage accross barrier = 0.3V
The dropper diode voltage regulator is a type of voltage regulator. It is comprised of a single diode that serves as the voltage regulating device.
The effect of diode voltage drop as the output voltage is that the input voltage will not be totally transferred to the output because power loss in the diode . The output voltage will then be given by: vout=(vin)-(the diode voltage drop).
The amount of (forward biased) voltage across a diode is dependent on current and temperature. A typical silicon diode has a forward voltage of about 0.6V at low current and temperature. As current goes up, voltage goes up slightly, with a typical voltage being 1.4V at high current. As temperature goes up, voltage goes down slightly, but the maximum current rating also goes down.