BJT & FET parameters are temperature dependent. In BJT the collector junction resistance decreasing ( collector current increasing) with temperature raise.Due to the highe temperature & current transistor will damage quickly. In FET drain resistance increasing (drain current decreasing ) with increasing temperature.Due to this property it will not damage easily. We can say from the above two statements FET is more temperature stable.FET can use in highe temperature applications.
the mos transistor have higher input impedence compared to that of a bjt transistor.
And also from integration point of view mos transistors provides higher packing density compared to bjt. so ICs made by mos transistor can be more smaller.
The advantage is most of the circuit has already been connected up for you and you only have to add a dc power supply and couple of components to set what frequency you want it to work at.
You can use an npn or a pnp bjt in a common emitter amplifier circuit. The decision of which one to use is based on whether you want the collector and base to be more positive (npn) or more negative (pnp) than the emitter.
1-BJT is bipolar while JFET is unipolar. 2-BJT has low input impedence while JFET has high input impedence. 3-JFET has low power discipation as compared to BJT. 4-JFET has low noise as compared to BJT. 5-BJT is current controlled while JFET is voltage controlled. 6-JFET is mostly used in digital circuits.
Because Beta (current gain) in a transistor is inversely proportional to frequency. Hence it increases as frequency decreases. Also the ac voltage gain is directly proportional to Beta.
The maximum base thickness in a BJT is dependent on a number of variables and parameters (or call them "constraints"). You could create a base region with thickness ranging from a few layers of atoms up to the point where the "base" region responds to the models of bulk semiconductor by messing with the process parameters. But why? If the base is too thick then with the transistor biased into the 'active' region (i.e., B-E junction forward biased & B-C junction reverse biased), the transistor 'alpha' (the ratio of carriers collected by BC to those generated in BE) will be hopelessly low and the transistor will not exhibit the high current gain that you expect from BJTs. That's because a thick base provides too much opportunity for large numbers of forward current charge carriers to be recaptured by the crystal matrix or lost to the collector current in other ways.
Bipolar junction transistor(BJT)
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
For a BJT transistor the three basic elements are collector, base and emitter. For a FET transistor are drain, gate and source which are analogous for the BJT parts mentioned before.
For a BJT transistor the three basic elements are collector, base and emitter. For a FET transistor are drain, gate and source which are analogous for the BJT parts mentioned before.
An advantage of JFET is stable high current operation. A disadvantage of JFET is low capacitance. An advantage of BJT is constant voltage operation. A disadvantage of BJT is low thermal conductance.
Define BJTSRAM?
The BJT is the bipolar junction transistor, the PCT is the point contact transistor, the UJT is the uni-junction transistor, the SBT is the surface barrier transistor, the FET is the field effect transistor, the GJT is the grown-junction transistor, the AJT is the alloy-junction transistor, and the DFT is the drift field-junction transistor.
Unless it is some leet speak term I am not aware of, BJTstands for Bipolar Junction Transistor or (less common) Business Japanese Proficiency Test.
A MOSFET (metal oxide semiconductor field effect transistor) can be used INSTEAD of a BJT (bypolar junction transistor, so transistor is redundant in your question), if the circuit in question is modified to allow it and the MOSFET is chosen appropriately. BJT's will usually have a higher intrinsic gain, but have lower input resistance. Also a BJT in general will work better at higher frequencies than a MOSFET (unless you choose a high frequency MOSFET) due to the capacitive nature of MOSFETs.
we will perform a dc analysis over it
UJT (UniJunction Transistor): It is a transistor with only one junction and three terminals: an emitter (E) and two bases (B1 and B2). BJT (Bipolar Junction Transistor): This type of transistor consists of two junctions and three terminals, namely Emitter "E", Base "B" and Collector"C". There are two types of BJT, i) PNP and ii) NPN.
TTL stands for "transistor-transistor logic" and consists of using BJT's ("bipolar junction transistors") to conduct the logic for the circuit.