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Both are 1.0 AMP SILICON S general purpose ,Low forward voltage drop. High surge current capabilityRECTIFIER.The only difference is in the maximum repetitive reverse voltage which is

1N4001 has a maximum repetitive reverse voltage of 50 V,

1N4007 is 1000V.

Otherwise they are the same. There must be a fault in the circuit which caused the burn-out.

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Q: What is the main difference between diode IN4001 and IN4007?
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