Both are 1.0 AMP SILICON S general purpose ,Low forward voltage drop. High surge current capabilityRECTIFIER.The only difference is in the maximum repetitive reverse voltage which is
1N4001 has a maximum repetitive reverse voltage of 50 V,
1N4007 is 1000V.
Otherwise they are the same. There must be a fault in the circuit which caused the burn-out.
The 1 stands for number of semiconductor junctions The N means it's a semiconductor diode
gunn diode is transfered electron device & PIN diode is semiconductor device
the High voltage rated diodes are power diodes while of low rating or normal voltage rating are considered to as ordinary / normal diode
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
THE 1n4000 series are classified as rectifiers for low frequency use having a big capacitance at the junction the other are diodes that have a very small capacitance therefore a quick disconnect time from conducting to off.
The only difference is the maximum repetitive capability which is maximum for IN4007 compared to OA79
IN in IN4001 refers to the type of diode. The IN is a designation used by some manufacturers to indicate that it is an axial lead diode. The IN4001 is a commonly used diode in electronics, often used for rectifying AC signals in power supply circuits.
there is no forward breakdown voltage for any diode
forward drop is the same as any other silicon diode, about 0.7V
It means that the semi conductor have only one pn junction
The 1 stands for number of semiconductor junctions The N means it's a semiconductor diode
maximum forward current in diode IN4007 is 30 amp
difference between detector and diode
The difference in the 1N4007 diode and the 1N4007S diode is the voltage. The 1N4007S has a higher voltage but the meaning of the S is not listed.
Zener diode is heavily doped pn junction diode.
gunn diode is transfered electron device & PIN diode is semiconductor device
what is the difference between reverse characteristics of zener diode and a practical diode ?