forward drop is the same as any other silicon diode, about 0.7V
there is no forward breakdown voltage for any diode
The only difference is the maximum repetitive capability which is maximum for IN4007 compared to OA79
The forward biased voltage drop of a diode depends on the type of diode and the current through the diode. A typical silicon diode will exhibit a voltage drop between 0.6v and 1.4v depending on current. An LED might range from 2v to 3v. A germanium diode might go a low as 0.2v. Bottom line; it varies.
maximum forward current in diode IN4007 is 30 amp
For answering this question we have to consider the constant voltage drop model of the diode which says that if voltage across diode is less then its cut in voltage than assume diode to be open circuit and if it is greater then assume diode to be short circuit.Till the input voltage is less than the cut in voltage, diode is open circuit(thus no current through the circuit). Thus entire input voltage appears across the diode as output.When input voltage is greater than or equal to cut in voltage, then short circuit the diode. Thus, there will be no voltage drop across the diode as output.Thus cut in voltage decides when to consider the diode open circuit and when short circuit. It decides when the diode will have output when it will not.
there is no forward breakdown voltage for any diode
The effect of diode voltage drop as the output voltage is that the input voltage will not be totally transferred to the output because power loss in the diode . The output voltage will then be given by: vout=(vin)-(the diode voltage drop).
The only difference is the maximum repetitive capability which is maximum for IN4007 compared to OA79
voltage drop deviding accure
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
Yes, the forward voltage drop of a Schottky diode is usually more than the forward voltage drop of a tunnel diode. A Schottky diode voltage drop is between approximately 0.15 to 0.45 volt. The interesting thing that makes a tunnel diode different from other diodes is its "negative resistance region" with a "peak current" around 0.06 volt and a "valley current" around 0.30 volt.
The 1 stands for number of semiconductor junctions The N means it's a semiconductor diode
The forward biased voltage drop of a diode depends on the type of diode and the current through the diode. A typical silicon diode will exhibit a voltage drop between 0.6v and 1.4v depending on current. An LED might range from 2v to 3v. A germanium diode might go a low as 0.2v. Bottom line; it varies.
maximum forward current in diode IN4007 is 30 amp
For answering this question we have to consider the constant voltage drop model of the diode which says that if voltage across diode is less then its cut in voltage than assume diode to be open circuit and if it is greater then assume diode to be short circuit.Till the input voltage is less than the cut in voltage, diode is open circuit(thus no current through the circuit). Thus entire input voltage appears across the diode as output.When input voltage is greater than or equal to cut in voltage, then short circuit the diode. Thus, there will be no voltage drop across the diode as output.Thus cut in voltage decides when to consider the diode open circuit and when short circuit. It decides when the diode will have output when it will not.
Both are 1.0 AMP SILICON S general purpose ,Low forward voltage drop. High surge current capabilityRECTIFIER.The only difference is in the maximum repetitive reverse voltage which is 1N4001 has a maximum repetitive reverse voltage of 50 V, 1N4007 is 1000V. Otherwise they are the same. There must be a fault in the circuit which caused the burn-out.
There is no exact substitute for a germanium diode, except another germanium diode. However if the only concern is to get a lower forward voltage drop than that of a silicon diode (0.7V), then a schottky barrier diode may be a suitable replacement as its forward voltage drop (<0.1V) is even lower than that of a germanium diode (0.2V).