We use pn junction diode in rfctification as a rectifier becase it allows current to flow in one direction only, i.e. in forward biase only , and stop current to flow in reverse baised. thats why we use pn junction diode in rectification.
A: Actually it is only one transistor required for amplification the other junction can be a diode. As current Begin to flow it causes a bias across one junction which is opposite biasing for the other, A good differential amplifier will have those junction virtually at the same point with a very good current source because any mismatched will cause and output without any input. It is called voltage offset on the other end if the feedback current is very small it will also produce an output voltage offset known as current offset or basically errors
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A: THAT IS CORRECT a diode conducts only one way that is why it is called a semiconductor Reversing the voltage no current will flow until breakdown.
It is one junction i.e. P-N junction diode.
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condensation,vaporization
The resistance of a forward biased pn junction is zero.
A junction diode is very useful serving as a rectifier, a switch, or a voltage reference, in an electronic circuit. Switch/rfectifier: the diode acts like a wire when the applied forward bias is above 0.6 V and like an insulator when the bias is reverse but less than the breakdown voltage. The diodes are ubiquitous in the ESD-protect circuit of an input of an electronic circuit. When the reverse bias is high enough, the diode starts to conduct again. However, the action is rather abrupt, meaning a change in 0.1 V increases the reverse current by orders of magnitude. The diode (reverse) voltage seems to have been pinned, regardless of the current henceforth, hence a voltage reference. Also, the pn junction acts like a poorly-insulated capacitor, normally in the reverse-bias region, but acts a capacitor nonetheless, so the designer has one more option to use. The junction diode can serve as an on-chip thermometer after calibration. The junction reverse current is very sensitive to the junction temperature. One unintentional usage is as an impurity sensor. The ideality factor in the forward-bias region is very sensitive to impurity during the fabrication and after passivation. The fact that the pn junction needs to be charged and discharged to realize the switching function, causes a delay in action. This delay can be undesirable to high-speed operations. In voltage referencing, the diode can be over-stressed during breakdown. The pn junction can be thermally destroyed in an avalanche action. The result is a an unintentional permanent short circuit. Since the diode requires a finite voltage level to turn on, this overhead of 0.5V is a headache to a designer who may be using a power supply of 1.8V or lower. Schottky-barrier diodes are not always available to reduce this overhead.
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