The depletion region is smaller in germanium compared to silicon because germanium has a lower bandgap energy, meaning that charge carriers can easily cross the depletion region and recombine on the other side. This results in a smaller built-in potential and a smaller depletion region in germanium.
The depletion region in germanium is small because germanium has a lower band gap compared to silicon. This results in a higher charge carrier concentration and a narrower depletion region. Additionally, germanium has a higher intrinsic carrier concentration, leading to a smaller depletion region.
The maximum spectral response of germanium and silicon is in the infrared region, not the X-ray region. Both materials are commonly used in infrared sensing applications due to their sensitivity in this range of the electromagnetic spectrum. X-rays are typically detected using materials such as cadmium telluride or mercury cadmium telluride.
Germanium was first discovered in a rare mineral called argyrodite, which was found in the Himmelsfürst mine, Germany. It is also found in small amounts in various minerals like germanite, argyrodite, and zinc ores.
Silicon was not widely known until Silicon Valley became prominent because the region became a hub for technological innovation and semiconductor development. Silicon Valley derived its name from the silicon material used in producing semiconductors which are vital components in electronic devices. The success and growth of tech companies in Silicon Valley brought attention to the importance of silicon in the technology industry.
The Indian Silicon Plateau is a term used to describe the city of Bangalore, in the southern part of India. It is known as the Silicon Valley of India due to its thriving IT industry and numerous technology companies. The region has been a hub for innovation, entrepreneurship, and technological development.
The depletion region in germanium is small because germanium has a lower band gap compared to silicon. This results in a higher charge carrier concentration and a narrower depletion region. Additionally, germanium has a higher intrinsic carrier concentration, leading to a smaller depletion region.
The higher leakage current in germanium compared to silicon is mainly due to its lower bandgap energy, which allows more thermally generated carriers to flow through at room temperature. Additionally, germanium has lower electron mobility and higher intrinsic carrier concentration than silicon, contributing to increased leakage current.
The maximum spectral response of germanium is in the infrared region, while the maximum spectral response of silicon is in the visible light region. Germanium has a broader spectral response range compared to silicon.
ultraviolet region
The maximum spectral response of germanium and silicon is in the infrared region, not the X-ray region. Both materials are commonly used in infrared sensing applications due to their sensitivity in this range of the electromagnetic spectrum. X-rays are typically detected using materials such as cadmium telluride or mercury cadmium telluride.
Germanium has a maximum spectral response at around 1.8 µm wavelength, while silicon's maximum spectral response is at around 1.1 µm wavelength.
== When we make a semiconductor junction (a p-n junction), the electric fields force charges to shift creating what is called a depletion region. This depletion region forms a potential barrier across the junction. This potential barrier has a voltage associated with it, and that voltage is 0.3 volts (approximately) for germanium semiconductor material, and 0.7 volts (approximately) for silicon semiconductor. The terms we apply to this barrier potential are the built-in voltage (or potential), junction voltage (or potential), and contact potential. Use the link below to check facts and review some other closely related material.
Depletion region is the region where current carriers such as electrons and holes are absent.
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depletion region will decrease.
in forward biasing depletion region width decreases and in reverse biasing it increases .
depletion region formed by either side of p&n junctions mobile charges accumulate in that places.Type your answer here...