FET is a field effect transistor, abbreviated to FET. There are two basic types of FET: a junction FET abbreviated to JFET and an insulated gate FET , abbreviated to IGFET. The most common type of IGFET is a metal-oxide silicon FET, Known as a MOSFET. Modern microprocessors may contain tens of millions of MOSFETs.
mainly i will tell ttwo advantages:- 1)in FET "thermal runaway" never occurs but in bjt it occurs easily...thermal runaway means overheating and damage of fet due to different biasing voltages.. 2) since FET is a unipolar device so only one carrier type is required here ,but bjt is a bipolar device .. 3) FET is smaller in size than BJT of same rating. i mean to say that at the place of 10 bjts we can use 90 FETs ..so area cosumption is less
the differences between UJT and FET are :- 1. structural :- a. there is only one p-channel in the UJT where as two in JFET b. the p-channel of UJT is more highly doped when compared to p-channel in JFET 2. functional :- UJT always works in forward biased condition (gate is forward biased) where as JFET always work in rverse bias condition (gate is reverse biased)
• High Input Impedance Amplifier. • Low-Noise Amplifier. • Differential Amplifier. • Constant Current Source. • Analog Switch or Gate. • Voltage Controlled Resistor. • JFET as a Switch • JFET as a Chopper • JFET as a Current source • JFET as a Amplifier • JFET as a Buffer
A FET is called a square-law device because of the relationship of ID to the square of a term containing VGS.
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mosfet, JFET ,these are again divded into many typesdepending upon their material they are made of
FETs don't have current gain as no current flows through the gate. The gain of a FET is a voltage gain and is called mu.
FET stands for field-effect transistor. There are more than just two kinds. The kinds of FET include CNTFET, DEPFET, DGMOSFET, DNAFET, FREDFET, HIGFET, ISFET, JFET, MESFET, MODEFET and OFET.
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The structure of a UJT is quite similar to that of an N-channel JFET. The main difference is that P-type (gate) material surrounds the N-type (channel) material in case of JFET and the gate surface of the JFET is much larger than emitter junction of UJT.
you want to keep the channel electrically isolated from the gate (jfet) or substrate (mosfet) so that it operates as a fet, don't you? if it was forward biased it would just be a diode with no field effect.
A: A FET has a very hi impedance it requires mostly potential as opposed to current like a transistor does,
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
mainly i will tell ttwo advantages:- 1)in FET "thermal runaway" never occurs but in bjt it occurs easily...thermal runaway means overheating and damage of fet due to different biasing voltages.. 2) since FET is a unipolar device so only one carrier type is required here ,but bjt is a bipolar device .. 3) FET is smaller in size than BJT of same rating. i mean to say that at the place of 10 bjts we can use 90 FETs ..so area cosumption is less
If the gate-channel junction of a JFET was not reverse biased the JFET would just act as a forward biased diode across that junction and the gate would cease to have any control over the channel conductance. For the same reason in a MOSFET the substrate-source/channel/drain junction must remain reverse biased. The MOSFET could not act as a MOSFET.
the differences between UJT and FET are :- 1. structural :- a. there is only one p-channel in the UJT where as two in JFET b. the p-channel of UJT is more highly doped when compared to p-channel in JFET 2. functional :- UJT always works in forward biased condition (gate is forward biased) where as JFET always work in rverse bias condition (gate is reverse biased)
A Jfet works by applying voltage to the drain of the jfet. A jfet will then conduct across from drain to source.