because pmos has low mobility . the inverter threshold voltage can be shifted to the middle and the inverter is more symmetrical in terms of transistor times.
Greater than, as four is more than zero.
Greater than 90 degrees but less than 180 degrees.
what is c, x + 2y, x+y equal to or greater than 8, x equal to or greater than 3, y equal to or greater than 0.
False. A is greater than C. ******************** I'm not in calculus but if A isn't less than B, then that means its either greater than or equal to it. and if B isn't less than C then its greater or equal to. so that means that A is either greater than or equal to C. so that means that A than C.
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NMOS is built with n-type source and drain and a p-type substrate, while PMOS is built with p-type source and drain and a n-type substrate. In a NMOS, carriers are electrons, while in a PMOS, carriers are holes. When a high voltage is applied to the gate, NMOS will conduct, while PMOS will not. Furthermore, when a low voltage is applied in the gate, NMOS will not conduct and PMOS will conduct. NMOS are considered to be faster than PMOS, since the carriers in NMOS, which are electrons, travel twice as fast as holes, which are the carriers in PMOS. But PMOS devices are more immune to noise than NMOS devices. Furthermore, NMOS ICs would be smaller than PMOS ICs (that give the same functionality), since the NMOS can provide one-half of the impedance provided by a PMOS (which has the same geometry and operating conditions).
Due to differences in carrier mobility between P and N type semiconductor, for similarly doped channels the channel of a PMOS FET will be a bit wider than the channel of an NMOS FET so that they both have identical channel resistance. To make the channel wider the PMOS FET will take a larger chip area.
in case p type semiconductor mosfet the carriers are holes whose mobility is much less then electrons hence they are not used. when mosfets were introduced originally PMOS was much more common than NMOS, because process for PMOS devices was simpler. but as process methods improved things transitioned to NMOS due to higher speed of operation due to greater carrier mobility (as explained above) and eventually CMOS due to lower power consumption. The same was true for similar reasons with bjts: PNP was easier to make but NPN was faster.
A falling elephant encounters a greater force of air resistance than a falling feather does. The force of air resistance can't be greater than the weight of the falling object. When the force of air resistance is equal to the weight of the falling object, the object stops accelerating, its falling speed becomes constant, and the force of air resistance doesn't get any bigger. So the force of air resistance against a falling feather can't be greater than the weight of the feather. But the force of air resistance against a falling elephant can be, and undoubtedly is, greater than the weight of a feather.
Thinner wire has greater resistance than thicker wire, assuming the same amount of current.
Aluminium wire has high resistance than Copper.
The parachutist will go down, of course. If gravity is greater than air resistance, then the parachutist would accelerate (his speed would increase). This would increase air resistance, up to the point where gravity and air resistance are in balance.
the shunt generator wont be started .hehe
The resistance in the start winding is greater because it is longer and thinner and has the greatest resistance to current flow
The current is greater than or equal to (6) divided by (the effective resistance of the circuit).
The gain of a class A, common emitter BJT amplifier, a fairly standard configuration, is defined as collector resistance divided by emitter resistance, or as hFe, whichever is less. Assuming that we are operating in a linear mode, and hFe is not a limiting factor, then the emitter resistance being greater than the collector resistance simply means that the gain is less than one.
When many resistances are connected in series, the equivalent resistance is greater than the greatest single resistance. When many resistances are connected in parallel, the equivalent resistance is less than the smallest single resistance.