The band gap of an electrolyte like Na2SO4 is not well-defined as it consists of ionic compounds which do not have a band structure like semiconductors. Band gap is a property of materials with covalent bonding, like semiconductors, where it represents the energy difference between the valence and conduction bands.
Yes, it is a strong electrolyte. It produces electricity.
yes, all the compounds of ist group elements are strong electrolytes.
Sodium sulfate, or Na2SO4, would be a good choice for the electrolyte in a salt bridge, as it has a high water solubility. In most cases, the salts in the half-cells would then also have sulfate as the anion.
1 mol Na2SO4 will dissociate to 2 mol Na+ and 1 mol SO42- Therefore 0.350 M Na2SO4 will dissociate to 0.350*2 = 0.700 mol Na+ and 0.350*1 = 0.350 mol SO42- Therefore the total concentration of ions is 0.700 mol + 0.350 mol = 1.050 mol.
To find the molality, we first calculate the moles of Na2SO4: 10.0g Na2SO4 * (1 mol Na2SO4 / 142.04g Na2SO4) = 0.0705 moles Na2SO4. Then, molality is calculated as moles of solute (Na2SO4) / kilograms of solvent (water): 0.0705 mol / 1.000 kg = 0.0705 mol/kg, which is the molality of the solution.
Yes, it is a strong electrolyte. It produces electricity.
yes, all the compounds of ist group elements are strong electrolytes.
The Gap Band was created in 1967.
It is direct band gap material.
Gap Band IV was created in 1981.
The Gap Band II was created in 1979.
The Gap Band III was created in 1980.
greenwood archer and pine street band
Yes it is. Most Sn (tin) materials as semiconductors are direct band gap materials. Silicon on the other hand is an indirect band gap material.
The Gap Band consists of brothers Charlie, Robert and Ronnie Wilson, the band first formed as the Greenwood, Archer and Pine Street Band in 1967. The group later changed their name to The Gap Band. Look up "You dropped a bomb on me" by The Gap Band.
Amorphous Silicon (a-Si) has band gap of about 1.7eV, whereas crystalline (c-Si) only has a band gap of 1.1eV
Gallium Arsenide (GaAs) has a 2.5eV band gap (@ 295 K)