Smart phones.
it loses electrons
Se will gain electrons
Silicon gains 4 electrons.
black hat hacker
The mobility of electrons is always greater than holes. Only the number of electrons and holes would be same in an intrinsic semiconductor.
electrons have less effective size than that of holes(which actually are not real)...formula says m(mobility)=drift velocity/electric field=et/m where t is relaxation time.. so mobility is inversely proportional to mass hence e has more mobility.
mu is the mobility(electrons or holes ) of the current carriers in the semiconductors. mu-e being electron mobility and mu-a being the hole mobility.
As the name certifies unipolar is having two types of carriers i.e holes and electrons but in the operation of the devise only one can take part in the mobility i.e negatively charged electrons or holes but in contrast to this in bipolar both two participate in the carrier.
Mobility in a semiconductor refers to the ability of charge carriers (electrons and holes) to move through the material in response to an electric field. It is a key parameter that affects the conductivity and performance of semiconductor devices. Higher mobility indicates that carriers can travel faster, leading to improved device efficiency and speed. Mobility is influenced by factors such as temperature, material purity, and the presence of defects.
Hole concentration can be calculated using the formula: p = n_i^2 / n where p is the concentration of holes, n_i is the intrinsic carrier concentration, and n is the concentration of electrons. This formula takes into account the charge balance in a semiconductor material.
There are no free electrons and holes in a pure semiconductor at 0k.
because in Ge mobility of both electrons and holes is higher than the corresponding carriers in Si....and second reason -Ge can be refined and processed more easily..
You can increase the conductivity of a semiconductor by doping it with impurities to increase the number of charge carriers (electrons or holes). This can be done by adding elements that provide extra electrons (N-type doping) or by adding elements that create holes (P-type doping). Additionally, raising the temperature can also increase the mobility of the charge carriers, thereby increasing conductivity.
1. NPN transistors current conductin is by electrons and conventional current flow will be in the opposite direction. 2. Majority charge carriers are electrons whose mobility is almost double than that of holes.
In a semiconductor, the conduction band is filled with electrons, which are negatively charged. Holes represent the absence of electrons in the valence band, not in the conduction band. Since the conduction band is typically occupied by electrons, it cannot have holes; instead, holes exist in the valence band where electrons are missing. Therefore, while there can be free electrons in the conduction band, holes are specifically a feature of the valence band.
In an intrinsic semiconductor like pure silicon, the number of free electrons is equal to the number of holes. Therefore, if there are 500,000 holes present, there will be 500,000 free electrons.