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The re model of a BJT (Bipolar Junction Transistor) focuses on the small-signal behavior of the transistor, where the transistor is represented using a small-signal parameter (re) that accounts for the dynamic resistance at the emitter junction. In contrast, the hybrid model combines both the small-signal parameters (like re) and the large-signal behavior, incorporating the transistor's input and output characteristics through a more complex representation that includes resistors, current sources, and controlled sources. Essentially, the re model simplifies analysis for small-signal applications, while the hybrid model provides a more comprehensive approach for varying signal conditions.

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2d ago

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