If one side of a single crystal of pure semiconductor (Ge or Si) is doped with acceptor impurity atoms and the other side is doped with donor atoms, a PN junction is formed. P region has a high concentration of positive holes and N region contains a large number of electrons.
There are framed by joining n-sort and p-sort semiconductor materials, as demonstrated as follows. Since the n-sort area has a high electron fixation and the p-sort a high opening focus, electrons diffuse from the n-sort side to the p-sort side. Essentially, gaps stream by dissemination from the p-sort side to the n-sort side. In the event that the electrons and openings were not charged, this dissemination procedure would proceed until the grouping of electrons and gaps on the two sides were the same, as happens if two gasses come into contact with one another. Notwithstanding, in a p-n intersection, when the electrons and openings move to the opposite side of the intersection, they abandon uncovered charges on dopant molecule locales, which are settled in the gem grid and are not able to move. On the n-sort side, positive particle centers are uncovered. On the p-sort side, negative particle centers are uncovered. An electric field Ê structures between the positive particle centers in the n-sort material and negative particle centers in the p-sort material. This district is known as the "consumption locale" since the electric field rapidly scopes free bearers out, subsequently the area is drained of free transporters.
There are framed by joining n-sort and p-sort semiconductor materials, as demonstrated as follows. Since the n-sort locale has a high electron fixation and the p-sort a high opening focus, electrons diffuse from the n-sort side to the p-sort side.
the material in which using for doping is already neutral.,,so the pn-junction diode also neutral........
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The built in potential in a pn junction. Due to the difference in carrier concentration between the sides of a pn junction. Diffusion potential increases with increase in doping levels.
We use pn junction diode in rfctification as a rectifier becase it allows current to flow in one direction only, i.e. in forward biase only , and stop current to flow in reverse baised. thats why we use pn junction diode in rectification.
semiconductor diode with out a pn junction.
A pn junction can be formed by bringing the p and n type materials together.
I cannot think of any, but a pn junction is a part of a diode and has a rectifying properties.
the material in which using for doping is already neutral.,,so the pn-junction diode also neutral........
The resistance of a forward biased pn junction is zero.
There are 2 type of biasing in PN junction didoe Forward biasing Reverse biasing
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When the pn junction is forward biased, some of the space charge is neutralized reducing the width of the pn junction.
The built in potential in a pn junction. Due to the difference in carrier concentration between the sides of a pn junction. Diffusion potential increases with increase in doping levels.
limts of operating a p-n junction
As temperature rises more minority carriers are created, causing leakage across the junction to rise. This can cause runaway and eventual destruction of the junction.